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Identification of deep levels associated with extended and point defects in GeSn epitaxial layers using DLTS

(2013) ECS Transactions. 53(1). p.251-258
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Abstract
Deep levels associated with extended and point defects in MOS capacitors fabricated on unintentionally doped GeSn epitaxial layers on Ge-on-Si substrates have been studied by Deep Level Transient Spectroscopy (DLTS). A 9nm layer of Al2O3 is deposited as high-k gate dielectric by Molecular Beam Epitaxy. The trap kinetics and origin of defect states is discussed. Also, it is shown that the dislocation cores in relaxed p-Ge are associated with bandlike donor-like states in the lower half of the band gap, and act as carrier trapping and recombination centers. In addition, slow and fast oxide interface traps are observed.
Keywords
SILICON, DISLOCATIONS, TECHNOLOGY, STATES, TRAPS, INTERFACE, CMOS

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Chicago
Gupta, Somya, Eddy Simoen, Henk Vrielinck, Clement Merckling, Benjamin Vincent, Federica Gencarelli, Roger Loo, and Marc Heyns. 2013. “Identification of Deep Levels Associated with Extended and Point Defects in GeSn Epitaxial Layers Using DLTS.” In ECS Transactions, ed. D Misra, Y Obeng, Z Karim, S DeGendt, and P Srinivasan, 53:251–258. Pennington, NJ, USA: Electrochemical Society (ECS).
APA
Gupta, Somya, Simoen, E., Vrielinck, H., Merckling, C., Vincent, B., Gencarelli, F., Loo, R., et al. (2013). Identification of deep levels associated with extended and point defects in GeSn epitaxial layers using DLTS. In D. Misra, Y. Obeng, Z. Karim, S. DeGendt, & P. Srinivasan (Eds.), ECS Transactions (Vol. 53, pp. 251–258). Presented at the 223rd ECS Meeting (ECS Spring Meeting 2013) ; 5th International symposium on Graphene, Ge/III-V and Emerging Materials For Post-CMOS Applications, Pennington, NJ, USA: Electrochemical Society (ECS).
Vancouver
1.
Gupta S, Simoen E, Vrielinck H, Merckling C, Vincent B, Gencarelli F, et al. Identification of deep levels associated with extended and point defects in GeSn epitaxial layers using DLTS. In: Misra D, Obeng Y, Karim Z, DeGendt S, Srinivasan P, editors. ECS Transactions. Pennington, NJ, USA: Electrochemical Society (ECS); 2013. p. 251–8.
MLA
Gupta, Somya, Eddy Simoen, Henk Vrielinck, et al. “Identification of Deep Levels Associated with Extended and Point Defects in GeSn Epitaxial Layers Using DLTS.” ECS Transactions. Ed. D Misra et al. Vol. 53. Pennington, NJ, USA: Electrochemical Society (ECS), 2013. 251–258. Print.
@inproceedings{3217564,
  abstract     = {Deep levels associated with extended and point defects in MOS capacitors fabricated on unintentionally doped GeSn epitaxial layers on Ge-on-Si substrates have been studied by Deep Level Transient Spectroscopy (DLTS). A 9nm layer of Al2O3 is deposited as high-k gate dielectric by Molecular Beam Epitaxy. The trap kinetics and origin of defect states is discussed. Also, it is shown that the dislocation cores in relaxed p-Ge are associated with bandlike donor-like states in the lower half of the band gap, and act as carrier trapping and recombination centers. In addition, slow and fast oxide interface traps are observed.},
  author       = {Gupta, Somya and Simoen, Eddy and Vrielinck, Henk and Merckling, Clement and Vincent, Benjamin and Gencarelli, Federica and Loo, Roger and Heyns, Marc},
  booktitle    = {ECS Transactions},
  editor       = {Misra, D and Obeng, Y and Karim, Z and DeGendt, S and Srinivasan, P},
  isbn         = {9781607683742},
  issn         = {1938-5862},
  keyword      = {SILICON,DISLOCATIONS,TECHNOLOGY,STATES,TRAPS,INTERFACE,CMOS},
  language     = {eng},
  location     = {Toronto, ON, Canada},
  number       = {1},
  pages        = {251--258},
  publisher    = {Electrochemical Society (ECS)},
  title        = {Identification of deep levels associated with extended and point defects in GeSn epitaxial layers using DLTS},
  url          = {http://dx.doi.org/10.1149/05301.0251ecst},
  volume       = {53},
  year         = {2013},
}

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