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Short-wave infrared colloidal quantum dot photodetectors on silicon

Author
Organization
Project
MIRACLE (Mid-InfraRed Active photonic integrated Circuits for Life sciences and Environment)
Project
Nano-MIR
Abstract
In this paper, two kinds of colloidal quantum dots, PbS and HgTe, are explored for SWIR photodetectors application. The colloidal dots are prepared by hot injection chemical synthesis, with organic ligands around the dots keeping them stable in solution. For the purpose of achieving efficient carrier transport between the dots in a film, these long organic ligands are replaced by shorter, inorganic ligands. We report uniform, ultra-smooth colloidal QD films without cracks realized by dip-coating and corresponding ligand exchange on a silicon substrate. Metal-free inorganic ligands, such as OH- and S2-, are investigated to facilitate the charge carrier transport in the film. Both PbS and HgTe-based quantum dot photoconductors were fabricated on interdigitated gold electrodes. For PbS-based detectors a responsivity of 200A/W is measured at 1.5μm, due to the large internal photoconductive gain. A 2.2μm cut-off wavelength for PbS photodetectors and 2.8μm for HgTe quantum dot photodetectors are obtained.
Keywords
photoconductor, NANOCRYSTALS, colloidal quantum dots, solid-state ligand exchange

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Citation

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Chicago
Hu, Chen, Alban Gassenq, Yolanda Justo Zarraquiños, Sergii Yakunin, Wolfgang G Heiss, Zeger Hens, and Günther Roelkens. 2013. “Short-wave Infrared Colloidal Quantum Dot Photodetectors on Silicon.” In Proceedings of SPIE, the International Society for Optical Engineering, ed. Manijeh Razeghi, E Tournie, and GJ Brown. Vol. 8631. Bellingham, WA, USA: SPIE, the International Society for Optical Engineering.
APA
Hu, C., Gassenq, A., Justo Zarraquiños, Y., Yakunin, S., Heiss, W. G., Hens, Z., & Roelkens, G. (2013). Short-wave infrared colloidal quantum dot photodetectors on silicon. In Manijeh Razeghi, E. Tournie, & G. Brown (Eds.), Proceedings of SPIE, the International Society for Optical Engineering (Vol. 8631). Presented at the Conference on Quantum Sensing and Nanophotonic Devices X ; SPIE Photonics West 2013, Bellingham, WA, USA: SPIE, the International Society for Optical Engineering.
Vancouver
1.
Hu C, Gassenq A, Justo Zarraquiños Y, Yakunin S, Heiss WG, Hens Z, et al. Short-wave infrared colloidal quantum dot photodetectors on silicon. In: Razeghi M, Tournie E, Brown G, editors. Proceedings of SPIE, the International Society for Optical Engineering. Bellingham, WA, USA: SPIE, the International Society for Optical Engineering; 2013.
MLA
Hu, Chen, Alban Gassenq, Yolanda Justo Zarraquiños, et al. “Short-wave Infrared Colloidal Quantum Dot Photodetectors on Silicon.” Proceedings of SPIE, the International Society for Optical Engineering. Ed. Manijeh Razeghi, E Tournie, & GJ Brown. Vol. 8631. Bellingham, WA, USA: SPIE, the International Society for Optical Engineering, 2013. Print.
@inproceedings{3201966,
  abstract     = {In this paper, two kinds of colloidal quantum dots, PbS and HgTe, are explored for SWIR photodetectors application. The colloidal dots are prepared by hot injection chemical synthesis, with organic ligands around the dots keeping them stable in solution. For the purpose of achieving efficient carrier transport between the dots in a film, these long organic ligands are replaced by shorter, inorganic ligands. We report uniform, ultra-smooth colloidal QD films without cracks realized by dip-coating and corresponding ligand exchange on a silicon substrate. Metal-free inorganic ligands, such as OH- and S2-, are investigated to facilitate the charge carrier transport in the film. Both PbS and HgTe-based quantum dot photoconductors were fabricated on interdigitated gold electrodes. For PbS-based detectors a responsivity of 200A/W is measured at 1.5μm, due to the large internal photoconductive gain. A 2.2μm cut-off wavelength for PbS photodetectors and 2.8μm for HgTe quantum dot photodetectors are obtained.},
  articleno    = {863127},
  author       = {Hu, Chen and Gassenq, Alban and Justo Zarraquiños, Yolanda and Yakunin, Sergii and Heiss, Wolfgang G and Hens, Zeger and Roelkens, Günther},
  booktitle    = {Proceedings of SPIE, the International Society for Optical Engineering},
  editor       = {Razeghi, Manijeh and Tournie, E and Brown, GJ},
  isbn         = {9780819494009},
  issn         = {0277-786X},
  keywords     = {photoconductor,NANOCRYSTALS,colloidal quantum dots,solid-state ligand exchange},
  language     = {eng},
  location     = {San Francisco, CA, USA},
  pages        = {8},
  publisher    = {SPIE, the International Society for Optical Engineering},
  title        = {Short-wave infrared colloidal quantum dot photodetectors on silicon},
  url          = {http://dx.doi.org/10.1117/12.2001246},
  volume       = {8631},
  year         = {2013},
}

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