Design of a 80 Gbit/s SiGe BiCMOS fully differential input buffer for serial electrical communication
- Author
- Timothy De Keulenaer (UGent) , Yu Ban (UGent) , Zhisheng Li (UGent) and Johan Bauwelinck (UGent)
- Organization
- Abstract
- This paper presents a high bandwidth transimpedance amplifier (TIA) used as a high speed input buffer for next generation serial electrical communication. The input buffer presented in this work is a linear broadband low noise amplifier. It is demonstrated that it can be used for receiving baseband modulated electrical communication in different modulation formats (NRZ, PAM4, duobinary, ...) for bit rates up to 80 Gbit/s. With good impedance matching up to 50 GHz, an area of 0.18mm2 and a power consumption of 80mW from a 2.5V power supply.
Downloads
-
(...).pdf
- full text
- |
- UGent only
- |
- |
- 700.36 KB
Citation
Please use this url to cite or link to this publication: http://hdl.handle.net/1854/LU-3105756
- MLA
- De Keulenaer, Timothy, et al. “Design of a 80 Gbit/s SiGe BiCMOS Fully Differential Input Buffer for Serial Electrical Communication.” 2012 19th IEEE International Conference on Electronics, Circuits and Systems (ICECS), 2012, pp. 237–39, doi:10.1109/ICECS.2012.6463757.
- APA
- De Keulenaer, T., Ban, Y., Li, Z., & Bauwelinck, J. (2012). Design of a 80 Gbit/s SiGe BiCMOS fully differential input buffer for serial electrical communication. 2012 19th IEEE International Conference on Electronics, Circuits and Systems (ICECS), 237–239. https://doi.org/10.1109/ICECS.2012.6463757
- Chicago author-date
- De Keulenaer, Timothy, Yu Ban, Zhisheng Li, and Johan Bauwelinck. 2012. “Design of a 80 Gbit/s SiGe BiCMOS Fully Differential Input Buffer for Serial Electrical Communication.” In 2012 19th IEEE International Conference on Electronics, Circuits and Systems (ICECS), 237–39. https://doi.org/10.1109/ICECS.2012.6463757.
- Chicago author-date (all authors)
- De Keulenaer, Timothy, Yu Ban, Zhisheng Li, and Johan Bauwelinck. 2012. “Design of a 80 Gbit/s SiGe BiCMOS Fully Differential Input Buffer for Serial Electrical Communication.” In 2012 19th IEEE International Conference on Electronics, Circuits and Systems (ICECS), 237–239. doi:10.1109/ICECS.2012.6463757.
- Vancouver
- 1.De Keulenaer T, Ban Y, Li Z, Bauwelinck J. Design of a 80 Gbit/s SiGe BiCMOS fully differential input buffer for serial electrical communication. In: 2012 19th IEEE International Conference on Electronics, Circuits and Systems (ICECS). 2012. p. 237–9.
- IEEE
- [1]T. De Keulenaer, Y. Ban, Z. Li, and J. Bauwelinck, “Design of a 80 Gbit/s SiGe BiCMOS fully differential input buffer for serial electrical communication,” in 2012 19th IEEE International Conference on Electronics, Circuits and Systems (ICECS), Seville, Spain, 2012, pp. 237–239.
@inproceedings{3105756,
abstract = {{This paper presents a high bandwidth transimpedance amplifier (TIA) used as a high speed input buffer for next generation serial electrical communication. The input buffer presented in this work is a linear broadband low noise amplifier. It is demonstrated that it can be used for receiving baseband modulated electrical communication in different modulation formats (NRZ, PAM4, duobinary, ...) for bit rates up to 80 Gbit/s. With good impedance matching up to 50 GHz, an area of 0.18mm2 and a power consumption of 80mW from a 2.5V power supply.}},
author = {{De Keulenaer, Timothy and Ban, Yu and Li, Zhisheng and Bauwelinck, Johan}},
booktitle = {{2012 19th IEEE International Conference on Electronics, Circuits and Systems (ICECS)}},
isbn = {{9781467312608}},
language = {{eng}},
location = {{Seville, Spain}},
pages = {{237--239}},
title = {{Design of a 80 Gbit/s SiGe BiCMOS fully differential input buffer for serial electrical communication}},
url = {{http://doi.org/10.1109/ICECS.2012.6463757}},
year = {{2012}},
}
- Altmetric
- View in Altmetric
- Web of Science
- Times cited: