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Inverting and non-inverting operation of InP microdisc modulators

(2012) ELECTRONICS LETTERS. 48(10). p.586-587
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Center for nano- and biophotonics (NB-Photonics)
Abstract
Reported is the inverting and non-inverting operation of indium phosphide (InP)-based microdisc modulators heterogeneously integrated on a silicon-on-insulator waveguide. The light transmitted through the waveguide can be modulated in an inverting and non-inverting manner depending on the bias conditions. Static extinction ratios and dynamic operation of the device up to 2.5 Gbit/s are demonstrated. Clean open eyes with extinction ratios better than 6 dB are shown and operation with a bit error rate below 1 x 10(-10) is demonstrated at 1.0 Gbit/s for both operation modes with a bias of only 1 Vpp.
Keywords
SILICON-ON-INSULATOR

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Citation

Please use this url to cite or link to this publication:

Chicago
Hofrichter, J, T Morf, A La Porta, BJ Offrein, Pauline Mechet, Geert Morthier, T De Vries, HJS Dorren, and O Raz. 2012. “Inverting and Non-inverting Operation of InP Microdisc Modulators.” Electronics Letters 48 (10): 586–587.
APA
Hofrichter, J, Morf, T., La Porta, A., Offrein, B., Mechet, P., Morthier, G., De Vries, T., et al. (2012). Inverting and non-inverting operation of InP microdisc modulators. ELECTRONICS LETTERS, 48(10), 586–587.
Vancouver
1.
Hofrichter J, Morf T, La Porta A, Offrein B, Mechet P, Morthier G, et al. Inverting and non-inverting operation of InP microdisc modulators. ELECTRONICS LETTERS. 2012;48(10):586–7.
MLA
Hofrichter, J, T Morf, A La Porta, et al. “Inverting and Non-inverting Operation of InP Microdisc Modulators.” ELECTRONICS LETTERS 48.10 (2012): 586–587. Print.
@article{3094573,
  abstract     = {Reported is the inverting and non-inverting operation of indium phosphide (InP)-based microdisc modulators heterogeneously integrated on a silicon-on-insulator waveguide. The light transmitted through the waveguide can be modulated in an inverting and non-inverting manner depending on the bias conditions. Static extinction ratios and dynamic operation of the device up to 2.5 Gbit/s are demonstrated. Clean open eyes with extinction ratios better than 6 dB are shown and operation with a bit error rate below 1 x 10(-10) is demonstrated at 1.0 Gbit/s for both operation modes with a bias of only 1 Vpp.},
  author       = {Hofrichter, J and Morf, T and La Porta, A and Offrein, BJ and Mechet, Pauline and Morthier, Geert and De Vries, T and Dorren, HJS and Raz, O},
  issn         = {0013-5194},
  journal      = {ELECTRONICS LETTERS},
  language     = {eng},
  number       = {10},
  pages        = {586--587},
  title        = {Inverting and non-inverting operation of InP microdisc modulators},
  url          = {http://dx.doi.org/10.1049/el.2012.0684},
  volume       = {48},
  year         = {2012},
}

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