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Abstract
Results of a comparative study of diodes processed on n-type Cz grown Si substrates without and with Ge doping concentration of about 10(19) cm(-3) and 10(20) cm(-3) are presented. To investigate the influence of Ge doping on formation of the radiation induced defects, the as-processed diodes were irradiated with 2 MeV electrons and alpha particles with fluences in the range of 10(12) and 10(17) cm(-2).
Keywords
germanium doping, silicon, radiation defects

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Citation

Please use this url to cite or link to this publication:

Chicago
Uleckas, A, E Gaubas, LF Makarenko, and Jan Vanhellemont. 2012. “Study of Radiation Defect Characteristics in Ge Doped Si Structures.” In Radiation Interaction with Material and Its Use in Technologies, ed. A Grigonis, 270–273. Kaunas, Lithuania: Kaunas University of Technology Press.
APA
Uleckas, A., Gaubas, E., Makarenko, L., & Vanhellemont, J. (2012). Study of radiation defect characteristics in Ge doped Si structures. In A. Grigonis (Ed.), Radiation Interaction with Material and Its Use in Technologies (pp. 270–273). Presented at the 4th International conference on Radiation Interaction with Material and Its Use in Technologies, Kaunas, Lithuania: Kaunas University of Technology Press.
Vancouver
1.
Uleckas A, Gaubas E, Makarenko L, Vanhellemont J. Study of radiation defect characteristics in Ge doped Si structures. In: Grigonis A, editor. Radiation Interaction with Material and Its Use in Technologies. Kaunas, Lithuania: Kaunas University of Technology Press; 2012. p. 270–3.
MLA
Uleckas, A et al. “Study of Radiation Defect Characteristics in Ge Doped Si Structures.” Radiation Interaction with Material and Its Use in Technologies. Ed. A Grigonis. Kaunas, Lithuania: Kaunas University of Technology Press, 2012. 270–273. Print.
@inproceedings{3081760,
  abstract     = {Results of a comparative study of diodes processed on n-type Cz grown Si substrates without and with Ge doping concentration of about 10(19) cm(-3) and 10(20) cm(-3) are presented. To investigate the influence of Ge doping on formation of the radiation induced defects, the as-processed diodes were irradiated with 2 MeV electrons and alpha particles with fluences in the range of 10(12) and 10(17) cm(-2).},
  articleno    = {P2-10},
  author       = {Uleckas, A and Gaubas, E and Makarenko, LF and Vanhellemont, Jan},
  booktitle    = {Radiation Interaction with Material and Its Use in Technologies},
  editor       = {Grigonis, A},
  issn         = {1822-508X},
  language     = {eng},
  location     = {Kaunas, Lithuania},
  pages        = {P2-10:270--P2-10:273},
  publisher    = {Kaunas University of Technology Press},
  title        = {Study of radiation defect characteristics in Ge doped Si structures},
  year         = {2012},
}

Web of Science
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