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Solution-processed and low-temperature metal oxide n-channel thin-film transistors and low-voltage complementary circuitry on large-area flexible polyimide foil

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Abstract
High-performance solution-based n-type metal oxide thin-film transistors (TFTs), fabricated directly on polyimide foil at a post-annealing temperature of only 250 °C, are realized and reported. Saturation mobilities exceeding 2 cm²/(Vs) and on-to-off current ratios up to 108 are achieved. The usage of these oxide n-type TFTs as the pixel drive and select transistors in future flexible active-matrix organic light-emitting diode (AMOLED) displays is proposed. With these oxide n-type TFTs, fast and low-voltage n-type only flexible circuitry is demonstrated. Furthermore, a complete 8-bit radio-frequency identification transponder chip on foil has been fabricated and measured, to prove that these oxide n-type TFTs have reached already a high level of yield and reliability. The integration of the same solution-based oxide n-type TFTs with organic p-type TFTs into hybrid complementary circuitry on polyimide foil is demonstrated. A comparison between both the n-type only and complementary elementary circuitry shows the high potential of this hybrid complementary technology for future line-drive circuitry embedded at the borders of flexible AMOLED displays.
Keywords
polyimide, solution-processed metal oxide, thin-film transistors, complementary technology, hybrid organic-inorganic, TFTS, FABRICATION

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Citation

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Chicago
Rockelé, Maarten, Duy-Vu Pham, Jürgen Steiger, Silviu Botnaras, Dennis Weber, Jan Vanfleteren, Tom Sterken, et al. 2012. “Solution-processed and Low-temperature Metal Oxide N-channel Thin-film Transistors and Low-voltage Complementary Circuitry on Large-area Flexible Polyimide Foil.” Journal of the Society for Information Display 20 (9): 499–507.
APA
Rockelé, M., Pham, D.-V., Steiger, J., Botnaras, S., Weber, D., Vanfleteren, J., Sterken, T., et al. (2012). Solution-processed and low-temperature metal oxide n-channel thin-film transistors and low-voltage complementary circuitry on large-area flexible polyimide foil. JOURNAL OF THE SOCIETY FOR INFORMATION DISPLAY, 20(9), 499–507.
Vancouver
1.
Rockelé M, Pham D-V, Steiger J, Botnaras S, Weber D, Vanfleteren J, et al. Solution-processed and low-temperature metal oxide n-channel thin-film transistors and low-voltage complementary circuitry on large-area flexible polyimide foil. JOURNAL OF THE SOCIETY FOR INFORMATION DISPLAY. 2012;20(9):499–507.
MLA
Rockelé, Maarten, Duy-Vu Pham, Jürgen Steiger, et al. “Solution-processed and Low-temperature Metal Oxide N-channel Thin-film Transistors and Low-voltage Complementary Circuitry on Large-area Flexible Polyimide Foil.” JOURNAL OF THE SOCIETY FOR INFORMATION DISPLAY 20.9 (2012): 499–507. Print.
@article{3051472,
  abstract     = {High-performance solution-based n-type metal oxide thin-film transistors (TFTs), fabricated directly on polyimide foil at a post-annealing temperature of only 250\,{\textdegree}C, are realized and reported. Saturation mobilities exceeding 2\,cm{\texttwosuperior}/(Vs) and on-to-off current ratios up to 108 are achieved. The usage of these oxide n-type TFTs as the pixel drive and select transistors in future flexible active-matrix organic light-emitting diode (AMOLED) displays is proposed. With these oxide n-type TFTs, fast and low-voltage n-type only flexible circuitry is demonstrated. Furthermore, a complete 8-bit radio-frequency identification transponder chip on foil has been fabricated and measured, to prove that these oxide n-type TFTs have reached already a high level of yield and reliability. The integration of the same solution-based oxide n-type TFTs with organic p-type TFTs into hybrid complementary circuitry on polyimide foil is demonstrated. A comparison between both the n-type only and complementary elementary circuitry shows the high potential of this hybrid complementary technology for future line-drive circuitry embedded at the borders of flexible AMOLED displays.},
  author       = {Rockel{\'e}, Maarten and Pham, Duy-Vu and Steiger, J{\"u}rgen and Botnaras, Silviu and Weber, Dennis and Vanfleteren, Jan and Sterken, Tom and Cuypers, Dieter and Steudel, Soeren and Myny, Kris and Schols, Sarah and van der Putten, Bas and Genoe, Jan and Heremans, Paul},
  issn         = {1071-0922},
  journal      = {JOURNAL OF THE SOCIETY FOR INFORMATION DISPLAY},
  language     = {eng},
  number       = {9},
  pages        = {499--507},
  title        = {Solution-processed and low-temperature metal oxide n-channel thin-film transistors and low-voltage complementary circuitry on large-area flexible polyimide foil},
  url          = {http://dx.doi.org/10.1002/jsid.114},
  volume       = {20},
  year         = {2012},
}

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