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Solution-processed and low-temperature metal oxide n-channel thin-film transistors and low-voltage complementary circuitry on large-area flexible polyimide foil

Maarten Rockelé, Duy-Vu Pham, Jürgen Steiger, Silviu Botnaras, Dennis Weber, Jan Vanfleteren UGent, Tom Sterken UGent, Dieter Cuypers UGent, Soeren Steudel and Kris Myny, et al. (2012) JOURNAL OF THE SOCIETY FOR INFORMATION DISPLAY. 20(9). p.499-507
abstract
High-performance solution-based n-type metal oxide thin-film transistors (TFTs), fabricated directly on polyimide foil at a post-annealing temperature of only 250 °C, are realized and reported. Saturation mobilities exceeding 2 cm²/(Vs) and on-to-off current ratios up to 108 are achieved. The usage of these oxide n-type TFTs as the pixel drive and select transistors in future flexible active-matrix organic light-emitting diode (AMOLED) displays is proposed. With these oxide n-type TFTs, fast and low-voltage n-type only flexible circuitry is demonstrated. Furthermore, a complete 8-bit radio-frequency identification transponder chip on foil has been fabricated and measured, to prove that these oxide n-type TFTs have reached already a high level of yield and reliability. The integration of the same solution-based oxide n-type TFTs with organic p-type TFTs into hybrid complementary circuitry on polyimide foil is demonstrated. A comparison between both the n-type only and complementary elementary circuitry shows the high potential of this hybrid complementary technology for future line-drive circuitry embedded at the borders of flexible AMOLED displays.
Please use this url to cite or link to this publication:
author
organization
year
type
journalArticle (original)
publication status
published
subject
keyword
polyimide, solution-processed metal oxide, thin-film transistors, complementary technology, hybrid organic-inorganic, TFTS, FABRICATION
journal title
JOURNAL OF THE SOCIETY FOR INFORMATION DISPLAY
Jnl Soc Info Display
volume
20
issue
9
pages
499 - 507
Web of Science type
Article
Web of Science id
000310582900004
JCR category
ENGINEERING, ELECTRICAL & ELECTRONIC
JCR impact factor
0.779 (2012)
JCR rank
157/242 (2012)
JCR quartile
3 (2012)
ISSN
1071-0922
DOI
10.1002/jsid.114
language
English
UGent publication?
yes
classification
A1
copyright statement
I have transferred the copyright for this publication to the publisher
id
3051472
handle
http://hdl.handle.net/1854/LU-3051472
date created
2012-11-12 17:32:24
date last changed
2013-07-04 14:37:10
@article{3051472,
  abstract     = {High-performance solution-based n-type metal oxide thin-film transistors (TFTs), fabricated directly on polyimide foil at a post-annealing temperature of only 250\,{\textdegree}C, are realized and reported. Saturation mobilities exceeding 2\,cm{\texttwosuperior}/(Vs) and on-to-off current ratios up to 108 are achieved. The usage of these oxide n-type TFTs as the pixel drive and select transistors in future flexible active-matrix organic light-emitting diode (AMOLED) displays is proposed. With these oxide n-type TFTs, fast and low-voltage n-type only flexible circuitry is demonstrated. Furthermore, a complete 8-bit radio-frequency identification transponder chip on foil has been fabricated and measured, to prove that these oxide n-type TFTs have reached already a high level of yield and reliability. The integration of the same solution-based oxide n-type TFTs with organic p-type TFTs into hybrid complementary circuitry on polyimide foil is demonstrated. A comparison between both the n-type only and complementary elementary circuitry shows the high potential of this hybrid complementary technology for future line-drive circuitry embedded at the borders of flexible AMOLED displays.},
  author       = {Rockel{\'e}, Maarten and Pham, Duy-Vu and Steiger, J{\"u}rgen and Botnaras, Silviu and Weber, Dennis and Vanfleteren, Jan and Sterken, Tom and Cuypers, Dieter and Steudel, Soeren and Myny, Kris and Schols, Sarah and van der Putten, Bas and Genoe, Jan and Heremans, Paul},
  issn         = {1071-0922},
  journal      = {JOURNAL OF THE SOCIETY FOR INFORMATION DISPLAY},
  keyword      = {polyimide,solution-processed metal oxide,thin-film transistors,complementary technology,hybrid organic-inorganic,TFTS,FABRICATION},
  language     = {eng},
  number       = {9},
  pages        = {499--507},
  title        = {Solution-processed and low-temperature metal oxide n-channel thin-film transistors and low-voltage complementary circuitry on large-area flexible polyimide foil},
  url          = {http://dx.doi.org/10.1002/jsid.114},
  volume       = {20},
  year         = {2012},
}

Chicago
Rockelé, Maarten, Duy-Vu Pham, Jürgen Steiger, Silviu Botnaras, Dennis Weber, Jan Vanfleteren, Tom Sterken, et al. 2012. “Solution-processed and Low-temperature Metal Oxide N-channel Thin-film Transistors and Low-voltage Complementary Circuitry on Large-area Flexible Polyimide Foil.” Journal of the Society for Information Display 20 (9): 499–507.
APA
Rockelé, M., Pham, D.-V., Steiger, J., Botnaras, S., Weber, D., Vanfleteren, J., Sterken, T., et al. (2012). Solution-processed and low-temperature metal oxide n-channel thin-film transistors and low-voltage complementary circuitry on large-area flexible polyimide foil. JOURNAL OF THE SOCIETY FOR INFORMATION DISPLAY, 20(9), 499–507.
Vancouver
1.
Rockelé M, Pham D-V, Steiger J, Botnaras S, Weber D, Vanfleteren J, et al. Solution-processed and low-temperature metal oxide n-channel thin-film transistors and low-voltage complementary circuitry on large-area flexible polyimide foil. JOURNAL OF THE SOCIETY FOR INFORMATION DISPLAY. 2012;20(9):499–507.
MLA
Rockelé, Maarten, Duy-Vu Pham, Jürgen Steiger, et al. “Solution-processed and Low-temperature Metal Oxide N-channel Thin-film Transistors and Low-voltage Complementary Circuitry on Large-area Flexible Polyimide Foil.” JOURNAL OF THE SOCIETY FOR INFORMATION DISPLAY 20.9 (2012): 499–507. Print.