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Integrated differential pressure sensor in silicon-on-insulator

Elewout Hallynck (UGent) and Peter Bienstman (UGent)
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Abstract
We have fabricated and characterized a compact integrated optical pressure sensor in silicon-on-insulator. Measurements have shown that spectral features in our device can shift up to 1585 pm going from -20 to 80 kPa.
Keywords
SUBSTRATE

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Citation

Please use this url to cite or link to this publication:

Chicago
Hallynck, Elewout, and Peter Bienstman. 2012. “Integrated Differential Pressure Sensor in Silicon-on-insulator.” In IEEE Photonics Conference 2012, Abstracts, 445–446. IEEE.
APA
Hallynck, E., & Bienstman, P. (2012). Integrated differential pressure sensor in silicon-on-insulator. IEEE Photonics Conference 2012, Abstracts (pp. 445–446). Presented at the 25th IEEE Photonics Conference (IPC), IEEE.
Vancouver
1.
Hallynck E, Bienstman P. Integrated differential pressure sensor in silicon-on-insulator. IEEE Photonics Conference 2012, Abstracts. IEEE; 2012. p. 445–6.
MLA
Hallynck, Elewout, and Peter Bienstman. “Integrated Differential Pressure Sensor in Silicon-on-insulator.” IEEE Photonics Conference 2012, Abstracts. IEEE, 2012. 445–446. Print.
@inproceedings{3009616,
  abstract     = {We have fabricated and characterized a compact integrated optical pressure sensor in silicon-on-insulator. Measurements have shown that spectral features in our device can shift up to 1585 pm going from -20 to 80 kPa.},
  author       = {Hallynck, Elewout and Bienstman, Peter},
  booktitle    = {IEEE Photonics Conference 2012, Abstracts},
  isbn         = {9781457707339},
  keyword      = {SUBSTRATE},
  language     = {eng},
  location     = {Burlingame, CA, USA},
  pages        = {445--446},
  publisher    = {IEEE},
  title        = {Integrated differential pressure sensor in silicon-on-insulator},
  year         = {2012},
}

Web of Science
Times cited: