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Lateral versus interdigitated diode design for 10 Gb/s low-voltage low-loss silicon ring modulators

M Pantouvaki, Hui Yu UGent, P Verheyen, G Lepage, Wim Bogaerts UGent, M Moelants, J Wouters, D Radisic, A Vandervorst and P Absil, et al. (2012) 2012 IEEE Optical Interconnects Conference, Abstracts. p.44-45
Please use this url to cite or link to this publication:
author
organization
year
type
conference
publication status
published
subject
in
2012 IEEE Optical Interconnects Conference, Abstracts
pages
44 - 45
publisher
IEEE
conference name
2012 IEEE Optical Interconnects Conference
conference location
Santa Fe, USA
conference start
2012-05-20
conference end
2012-05-23
language
English
UGent publication?
yes
classification
C3
copyright statement
I have transferred the copyright for this publication to the publisher
id
2996842
handle
http://hdl.handle.net/1854/LU-2996842
date created
2012-09-21 11:25:09
date last changed
2012-09-26 09:29:37
@inproceedings{2996842,
  author       = {Pantouvaki, M and Yu, Hui and Verheyen, P and Lepage, G and Bogaerts, Wim and Moelants, M and Wouters, J and Radisic, D and Vandervorst, A and Absil, P and Van Campenhout, J},
  booktitle    = {2012 IEEE Optical Interconnects Conference, Abstracts},
  language     = {eng},
  location     = {Santa Fe, USA},
  pages        = {44--45},
  publisher    = {IEEE},
  title        = {Lateral versus interdigitated diode design for 10 Gb/s low-voltage low-loss silicon ring modulators},
  year         = {2012},
}

Chicago
Pantouvaki, M, Hui Yu, P Verheyen, G Lepage, Wim Bogaerts, M Moelants, J Wouters, et al. 2012. “Lateral Versus Interdigitated Diode Design for 10 Gb/s Low-voltage Low-loss Silicon Ring Modulators.” In 2012 IEEE Optical Interconnects Conference, Abstracts, 44–45. IEEE.
APA
Pantouvaki, M., Yu, H., Verheyen, P., Lepage, G., Bogaerts, W., Moelants, M., Wouters, J., et al. (2012). Lateral versus interdigitated diode design for 10 Gb/s low-voltage low-loss silicon ring modulators. 2012 IEEE Optical Interconnects Conference, Abstracts (pp. 44–45). Presented at the 2012 IEEE Optical Interconnects Conference, IEEE.
Vancouver
1.
Pantouvaki M, Yu H, Verheyen P, Lepage G, Bogaerts W, Moelants M, et al. Lateral versus interdigitated diode design for 10 Gb/s low-voltage low-loss silicon ring modulators. 2012 IEEE Optical Interconnects Conference, Abstracts. IEEE; 2012. p. 44–5.
MLA
Pantouvaki, M, Hui Yu, P Verheyen, et al. “Lateral Versus Interdigitated Diode Design for 10 Gb/s Low-voltage Low-loss Silicon Ring Modulators.” 2012 IEEE Optical Interconnects Conference, Abstracts. IEEE, 2012. 44–45. Print.