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Lateral versus interdigitated diode design for 10 Gb/s low-voltage low-loss silicon ring modulators

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Chicago
Pantouvaki, M, Hui Yu, P Verheyen, G Lepage, Wim Bogaerts, M Moelants, J Wouters, et al. 2012. “Lateral Versus Interdigitated Diode Design for 10 Gb/s Low-voltage Low-loss Silicon Ring Modulators.” In 2012 IEEE Optical Interconnects Conference, Abstracts, 44–45. IEEE.
APA
Pantouvaki, M., Yu, H., Verheyen, P., Lepage, G., Bogaerts, W., Moelants, M., Wouters, J., et al. (2012). Lateral versus interdigitated diode design for 10 Gb/s low-voltage low-loss silicon ring modulators. 2012 IEEE Optical Interconnects Conference, Abstracts (pp. 44–45). Presented at the 2012 IEEE Optical Interconnects Conference, IEEE.
Vancouver
1.
Pantouvaki M, Yu H, Verheyen P, Lepage G, Bogaerts W, Moelants M, et al. Lateral versus interdigitated diode design for 10 Gb/s low-voltage low-loss silicon ring modulators. 2012 IEEE Optical Interconnects Conference, Abstracts. IEEE; 2012. p. 44–5.
MLA
Pantouvaki, M, Hui Yu, P Verheyen, et al. “Lateral Versus Interdigitated Diode Design for 10 Gb/s Low-voltage Low-loss Silicon Ring Modulators.” 2012 IEEE Optical Interconnects Conference, Abstracts. IEEE, 2012. 44–45. Print.
@inproceedings{2996842,
  author       = {Pantouvaki, M and Yu, Hui and Verheyen, P and Lepage, G and Bogaerts, Wim and Moelants, M and Wouters, J and Radisic, D and Vandervorst, A and Absil, P and Van Campenhout, J},
  booktitle    = {2012 IEEE Optical Interconnects Conference, Abstracts},
  language     = {eng},
  location     = {Santa Fe, USA},
  pages        = {44--45},
  publisher    = {IEEE},
  title        = {Lateral versus interdigitated diode design for 10 Gb/s low-voltage low-loss silicon ring modulators},
  year         = {2012},
}