Integrated optical pressure sensors in silicon-on-insulator
- Author
- Elewout Hallynck (UGent) and Peter Bienstman (UGent)
- Organization
- Project
- Abstract
- An optical pressure sensor can be useful in many applications where electronics fall short (e.g., explosive environments). We have fabricated and characterized compact, integrated optical pressure sensors on a silicon-on-insulator platform using ring resonators and Mach-Zehnder interferometers. The silicon substrate is locally etched using KOH to produce very thin membranes of 3.28 mu m. Measurements have shown that spectral features in our devices can shift up to 370 pm going from 0 to 80 kPa.
- Keywords
- Nanophotonics, SUBSTRATE, DIAPHRAGM, FIBER, optoelectronic and photonic sensor, photonic integrated circuits
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Citation
Please use this url to cite or link to this publication: http://hdl.handle.net/1854/LU-2988957
- MLA
- Hallynck, Elewout, and Peter Bienstman. “Integrated Optical Pressure Sensors in Silicon-on-Insulator.” IEEE PHOTONICS JOURNAL, vol. 4, no. 2, 2012, pp. 443–50, doi:10.1109/JPHOT.2012.2189614.
- APA
- Hallynck, E., & Bienstman, P. (2012). Integrated optical pressure sensors in silicon-on-insulator. IEEE PHOTONICS JOURNAL, 4(2), 443–450. https://doi.org/10.1109/JPHOT.2012.2189614
- Chicago author-date
- Hallynck, Elewout, and Peter Bienstman. 2012. “Integrated Optical Pressure Sensors in Silicon-on-Insulator.” IEEE PHOTONICS JOURNAL 4 (2): 443–50. https://doi.org/10.1109/JPHOT.2012.2189614.
- Chicago author-date (all authors)
- Hallynck, Elewout, and Peter Bienstman. 2012. “Integrated Optical Pressure Sensors in Silicon-on-Insulator.” IEEE PHOTONICS JOURNAL 4 (2): 443–450. doi:10.1109/JPHOT.2012.2189614.
- Vancouver
- 1.Hallynck E, Bienstman P. Integrated optical pressure sensors in silicon-on-insulator. IEEE PHOTONICS JOURNAL. 2012;4(2):443–50.
- IEEE
- [1]E. Hallynck and P. Bienstman, “Integrated optical pressure sensors in silicon-on-insulator,” IEEE PHOTONICS JOURNAL, vol. 4, no. 2, pp. 443–450, 2012.
@article{2988957, abstract = {{An optical pressure sensor can be useful in many applications where electronics fall short (e.g., explosive environments). We have fabricated and characterized compact, integrated optical pressure sensors on a silicon-on-insulator platform using ring resonators and Mach-Zehnder interferometers. The silicon substrate is locally etched using KOH to produce very thin membranes of 3.28 mu m. Measurements have shown that spectral features in our devices can shift up to 370 pm going from 0 to 80 kPa.}}, author = {{Hallynck, Elewout and Bienstman, Peter}}, issn = {{1943-0655}}, journal = {{IEEE PHOTONICS JOURNAL}}, keywords = {{Nanophotonics,SUBSTRATE,DIAPHRAGM,FIBER,optoelectronic and photonic sensor,photonic integrated circuits}}, language = {{eng}}, number = {{2}}, pages = {{443--450}}, title = {{Integrated optical pressure sensors in silicon-on-insulator}}, url = {{http://doi.org/10.1109/JPHOT.2012.2189614}}, volume = {{4}}, year = {{2012}}, }
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