Ghent University Academic Bibliography

Advanced

Diode string with reduced clamping-voltage for ESD-protection of RF-circuits

Ramses Pierco, Zhisheng Li UGent, Guy Torfs UGent, Xin Yin UGent, Johan Bauwelinck UGent and Xing-Zhi Qiu UGent (2012) ELECTRONICS LETTERS. 48(6). p.317-U74
abstract
A new diode string based ESD device is proposed. This device, realised in a 0.13 mm SiGe BiCMOS process, features a reduced clamping voltage compared to a conventional diode string topology. The addition of extra stages improves the relative reduction in clamping voltage of the device further and, as for a regular diode string, reduces the parasitic capacitance of the device. Hence the proposed circuit constitutes an excellent candidate for double-diode configurations commonly used to protect RF-pads. The proposed architecture is verified by means of simulation and transmission-line pulse tests. Measurement results of a four-stage version of the proposed diode string show a reduction of 28.5% in clamping voltage, realising an absolute clamping-voltage lower than that of a three-stage diode string.
Please use this url to cite or link to this publication:
author
organization
year
type
journalArticle (original)
publication status
published
subject
journal title
ELECTRONICS LETTERS
Electron. Lett.
volume
48
issue
6
pages
317 - U74
Web of Science type
Article
Web of Science id
000301439000012
JCR category
ENGINEERING, ELECTRICAL & ELECTRONIC
JCR impact factor
1.038 (2012)
JCR rank
128/242 (2012)
JCR quartile
3 (2012)
ISSN
0013-5194
DOI
10.1049/el.2012.0262
language
English
UGent publication?
yes
classification
A1
copyright statement
I have transferred the copyright for this publication to the publisher
id
2983933
handle
http://hdl.handle.net/1854/LU-2983933
date created
2012-09-10 10:33:36
date last changed
2016-12-19 15:42:57
@article{2983933,
  abstract     = {A new diode string based ESD device is proposed. This device, realised in a 0.13 mm SiGe BiCMOS process, features a reduced clamping voltage compared to a conventional diode string topology. The addition of extra stages improves the relative reduction in clamping voltage of the device further and, as for a regular diode string, reduces the parasitic capacitance of the device. Hence the proposed circuit constitutes an excellent candidate for double-diode configurations commonly used to protect RF-pads. The proposed architecture is verified by means of simulation and transmission-line pulse tests. Measurement results of a four-stage version of the proposed diode string show a reduction of 28.5\% in clamping voltage, realising an absolute clamping-voltage lower than that of a three-stage diode string.},
  author       = {Pierco, Ramses and Li, Zhisheng and Torfs, Guy and Yin, Xin and Bauwelinck, Johan and Qiu, Xing-Zhi},
  issn         = {0013-5194},
  journal      = {ELECTRONICS LETTERS},
  language     = {eng},
  number       = {6},
  pages        = {317--U74},
  title        = {Diode string with reduced clamping-voltage for ESD-protection of RF-circuits},
  url          = {http://dx.doi.org/10.1049/el.2012.0262},
  volume       = {48},
  year         = {2012},
}

Chicago
Pierco, Ramses, Zhisheng Li, Guy Torfs, Xin Yin, Johan Bauwelinck, and Xing-Zhi Qiu. 2012. “Diode String with Reduced Clamping-voltage for ESD-protection of RF-circuits.” Electronics Letters 48 (6): 317–U74.
APA
Pierco, R., Li, Z., Torfs, G., Yin, X., Bauwelinck, J., & Qiu, X.-Z. (2012). Diode string with reduced clamping-voltage for ESD-protection of RF-circuits. ELECTRONICS LETTERS, 48(6), 317–U74.
Vancouver
1.
Pierco R, Li Z, Torfs G, Yin X, Bauwelinck J, Qiu X-Z. Diode string with reduced clamping-voltage for ESD-protection of RF-circuits. ELECTRONICS LETTERS. 2012;48(6):317–U74.
MLA
Pierco, Ramses, Zhisheng Li, Guy Torfs, et al. “Diode String with Reduced Clamping-voltage for ESD-protection of RF-circuits.” ELECTRONICS LETTERS 48.6 (2012): 317–U74. Print.