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Study of irradiation induced changes of electrical and functional characteristics in Ge doped Si diodes

E Gaubas, A Uleckas, JM Rafi, J Chen, D Yang and Jan Vanhellemont UGent (2012) PHYSICA B-CONDENSED MATTER. 407(15). p.2998-3001
Please use this url to cite or link to this publication:
author
organization
year
type
journalArticle (proceedingsPaper)
publication status
published
subject
keyword
Irradiation hardness, Defects, Ge doping, Czochralski silicon
journal title
PHYSICA B-CONDENSED MATTER
Physica B
volume
407
issue
15
pages
2998 - 3001
conference name
26th International conference on Defects in Semiconductors (ICDS)
conference location
Nelson, New Zealand
conference start
2011-07-18
conference end
2011-07-22
Web of Science type
Article; Proceedings Paper
Web of Science id
000305790800046
JCR category
PHYSICS, CONDENSED MATTER
JCR impact factor
1.327 (2012)
JCR rank
42/68 (2012)
JCR quartile
3 (2012)
ISSN
0921-4526
DOI
10.1016/j.physb.2011.08.056
language
English
UGent publication?
yes
classification
A1
copyright statement
I have transferred the copyright for this publication to the publisher
id
2964339
handle
http://hdl.handle.net/1854/LU-2964339
date created
2012-07-26 06:47:17
date last changed
2012-08-08 12:52:46
@article{2964339,
  author       = {Gaubas, E and Uleckas, A and Rafi, JM and Chen, J and Yang, D and Vanhellemont, Jan},
  issn         = {0921-4526},
  journal      = {PHYSICA B-CONDENSED MATTER},
  keyword      = {Irradiation hardness,Defects,Ge doping,Czochralski silicon},
  language     = {eng},
  location     = {Nelson, New Zealand},
  number       = {15},
  pages        = {2998--3001},
  title        = {Study of irradiation induced changes of electrical and functional characteristics in Ge doped Si diodes},
  url          = {http://dx.doi.org/10.1016/j.physb.2011.08.056},
  volume       = {407},
  year         = {2012},
}

Chicago
Gaubas, E, A Uleckas, JM Rafi, J Chen, D Yang, and Jan Vanhellemont. 2012. “Study of Irradiation Induced Changes of Electrical and Functional Characteristics in Ge Doped Si Diodes.” Physica B-condensed Matter 407 (15): 2998–3001.
APA
Gaubas, E, Uleckas, A., Rafi, J., Chen, J., Yang, D., & Vanhellemont, J. (2012). Study of irradiation induced changes of electrical and functional characteristics in Ge doped Si diodes. PHYSICA B-CONDENSED MATTER, 407(15), 2998–3001. Presented at the 26th International conference on Defects in Semiconductors (ICDS).
Vancouver
1.
Gaubas E, Uleckas A, Rafi J, Chen J, Yang D, Vanhellemont J. Study of irradiation induced changes of electrical and functional characteristics in Ge doped Si diodes. PHYSICA B-CONDENSED MATTER. 2012;407(15):2998–3001.
MLA
Gaubas, E, A Uleckas, JM Rafi, et al. “Study of Irradiation Induced Changes of Electrical and Functional Characteristics in Ge Doped Si Diodes.” PHYSICA B-CONDENSED MATTER 407.15 (2012): 2998–3001. Print.