Advanced search
1 file | 437.30 KB Add to list

Study of irradiation induced changes of electrical and functional characteristics in Ge doped Si diodes

(2012) PHYSICA B-CONDENSED MATTER. 407(15). p.2998-3001
Author
Organization
Keywords
Irradiation hardness, Defects, Ge doping, Czochralski silicon

Downloads

  • (...).pdf
    • full text
    • |
    • UGent only
    • |
    • PDF
    • |
    • 437.30 KB

Citation

Please use this url to cite or link to this publication:

MLA
Gaubas, E, A Uleckas, JM Rafi, et al. “Study of Irradiation Induced Changes of Electrical and Functional Characteristics in Ge Doped Si Diodes.” PHYSICA B-CONDENSED MATTER 407.15 (2012): 2998–3001. Print.
APA
Gaubas, E, Uleckas, A., Rafi, J., Chen, J., Yang, D., & Vanhellemont, J. (2012). Study of irradiation induced changes of electrical and functional characteristics in Ge doped Si diodes. PHYSICA B-CONDENSED MATTER, 407(15), 2998–3001. Presented at the 26th International conference on Defects in Semiconductors (ICDS).
Chicago author-date
Gaubas, E, A Uleckas, JM Rafi, J Chen, D Yang, and Jan Vanhellemont. 2012. “Study of Irradiation Induced Changes of Electrical and Functional Characteristics in Ge Doped Si Diodes.” Physica B-condensed Matter 407 (15): 2998–3001.
Chicago author-date (all authors)
Gaubas, E, A Uleckas, JM Rafi, J Chen, D Yang, and Jan Vanhellemont. 2012. “Study of Irradiation Induced Changes of Electrical and Functional Characteristics in Ge Doped Si Diodes.” Physica B-condensed Matter 407 (15): 2998–3001.
Vancouver
1.
Gaubas E, Uleckas A, Rafi J, Chen J, Yang D, Vanhellemont J. Study of irradiation induced changes of electrical and functional characteristics in Ge doped Si diodes. PHYSICA B-CONDENSED MATTER. 2012;407(15):2998–3001.
IEEE
[1]
E. Gaubas, A. Uleckas, J. Rafi, J. Chen, D. Yang, and J. Vanhellemont, “Study of irradiation induced changes of electrical and functional characteristics in Ge doped Si diodes,” PHYSICA B-CONDENSED MATTER, vol. 407, no. 15, pp. 2998–3001, 2012.
@article{2964339,
  author       = {Gaubas, E and Uleckas, A and Rafi, JM and Chen, J and Yang, D and Vanhellemont, Jan},
  issn         = {0921-4526},
  journal      = {PHYSICA B-CONDENSED MATTER},
  keywords     = {Irradiation hardness,Defects,Ge doping,Czochralski silicon},
  language     = {eng},
  location     = {Nelson, New Zealand},
  number       = {15},
  pages        = {2998--3001},
  title        = {Study of irradiation induced changes of electrical and functional characteristics in Ge doped Si diodes},
  url          = {http://dx.doi.org/10.1016/j.physb.2011.08.056},
  volume       = {407},
  year         = {2012},
}

Altmetric
View in Altmetric
Web of Science
Times cited: