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Response to 'Comment on 'Intrinsic point defect incorporation in silicon single crystals grown from a melt, revisited'' [J. Appl. Phys. 111, 116102 (2012)]

Jan Vanhellemont UGent (2012) JOURNAL OF APPLIED PHYSICS. 111(11).
Please use this url to cite or link to this publication:
author
organization
year
type
misc (editorialMaterial)
publication status
published
subject
in
JOURNAL OF APPLIED PHYSICS
J. Appl. Phys.
volume
111
issue
11
article_number
116103
pages
1 pages
Web of Science type
Editorial Material
Web of Science id
000305401400172
JCR category
PHYSICS, APPLIED
JCR impact factor
2.21 (2012)
JCR rank
31/127 (2012)
JCR quartile
1 (2012)
ISSN
0021-8979
DOI
10.1063/1.4729525
language
English
UGent publication?
yes
classification
V
id
2962459
handle
http://hdl.handle.net/1854/LU-2962459
date created
2012-07-12 17:01:02
date last changed
2012-07-13 09:40:49
@misc{2962459,
  articleno    = {116103},
  author       = {Vanhellemont, Jan},
  issn         = {0021-8979},
  language     = {eng},
  number       = {11},
  pages        = {1},
  series       = {JOURNAL OF APPLIED PHYSICS},
  title        = {Response to 'Comment on 'Intrinsic point defect incorporation in silicon single crystals grown from a melt, revisited'' [J. Appl. Phys. 111, 116102 (2012)]},
  url          = {http://dx.doi.org/10.1063/1.4729525},
  volume       = {111},
  year         = {2012},
}

Chicago
Vanhellemont, Jan. 2012. “Response to  ’Comment on 'Intrinsic Point Defect Incorporation in Silicon Single Crystals Grown from a Melt, Revisited" [J. Appl. Phys. 111, 116102 (2012)].” Journal of Applied Physics.
APA
Vanhellemont, J. (2012). Response to  ’Comment on 'Intrinsic point defect incorporation in silicon single crystals grown from a melt, revisited" [J. Appl. Phys. 111, 116102 (2012)]. JOURNAL OF APPLIED PHYSICS.
Vancouver
1.
Vanhellemont J. Response to  ’Comment on 'Intrinsic point defect incorporation in silicon single crystals grown from a melt, revisited" [J. Appl. Phys. 111, 116102 (2012)]. JOURNAL OF APPLIED PHYSICS. 2012.
MLA
Vanhellemont, Jan. “Response to  ’Comment on 'Intrinsic Point Defect Incorporation in Silicon Single Crystals Grown from a Melt, Revisited" [J. Appl. Phys. 111, 116102 (2012)].” JOURNAL OF APPLIED PHYSICS 2012 : n. pag. Print.