Direct copper electrochemical deposition on Ru-based substrates for advanced interconnects target 30 nm and 1/2 pitch lines : from coupon to full-wafer experiments
- Author
- Silvia Armini, Steven Demuynck, Zaid El-mekki, Johan Swerts, Magi Margalit Nagar (UGent) , Aleksandar Radisic, Nancy Heylen, Gerald Beyer, Leonardus Leunissen and Philippe M Vereecken
- Organization
- Abstract
- Extending copper electrochemical deposition to 3x nm nodes and beyond requires a new plating approach that is not constrained by typical PVD copper seed step coverage performance. To this purpose, we propose a copper direct plating process on Plasma Enhanced Atomic Layer Deposition (PEALD) Ru-based resistive substrates, where the Cu seed is deposited in-situ during the front propagation from the edge to the center of the wafer. In order to understand the full-wafer copper direct plating process that occurs on these liners, the effect of plating tool advanced features, applied waveform, plating chemistry and substrate surface activation on the subsequent plated copper nucleation behavior are studied.
- Keywords
- FILMS, NUCLEATION
Downloads
-
(...).pdf
- full text
- |
- UGent only
- |
- |
- 1.18 MB
Citation
Please use this url to cite or link to this publication: http://hdl.handle.net/1854/LU-2915413
- MLA
- Armini, Silvia, et al. “Direct Copper Electrochemical Deposition on Ru-Based Substrates for Advanced Interconnects Target 30 Nm and 1/2 Pitch Lines : From Coupon to Full-Wafer Experiments.” ECS Transactions, edited by F Roozeboom et al., vol. 35, no. 2, Electrochemical Society (ECS), 2011, pp. 117–23, doi:10.1149/1.3568853.
- APA
- Armini, S., Demuynck, S., El-mekki, Z., Swerts, J., Nagar, M. M., Radisic, A., … Vereecken, P. M. (2011). Direct copper electrochemical deposition on Ru-based substrates for advanced interconnects target 30 nm and 1/2 pitch lines : from coupon to full-wafer experiments. In F. Roozeboom, D. Kwong, P. Timans, E. Gusev, H. Iwai, M. Ozturk, & V. Narayanan (Eds.), ECS Transactions (Vol. 35, pp. 117–123). https://doi.org/10.1149/1.3568853
- Chicago author-date
- Armini, Silvia, Steven Demuynck, Zaid El-mekki, Johan Swerts, Magi Margalit Nagar, Aleksandar Radisic, Nancy Heylen, Gerald Beyer, Leonardus Leunissen, and Philippe M Vereecken. 2011. “Direct Copper Electrochemical Deposition on Ru-Based Substrates for Advanced Interconnects Target 30 Nm and 1/2 Pitch Lines : From Coupon to Full-Wafer Experiments.” In ECS Transactions, edited by F Roozeboom, DL Kwong, PJ Timans, EP Gusev, H Iwai, MC Ozturk, and V Narayanan, 35:117–23. Pennington, NJ, USA: Electrochemical Society (ECS). https://doi.org/10.1149/1.3568853.
- Chicago author-date (all authors)
- Armini, Silvia, Steven Demuynck, Zaid El-mekki, Johan Swerts, Magi Margalit Nagar, Aleksandar Radisic, Nancy Heylen, Gerald Beyer, Leonardus Leunissen, and Philippe M Vereecken. 2011. “Direct Copper Electrochemical Deposition on Ru-Based Substrates for Advanced Interconnects Target 30 Nm and 1/2 Pitch Lines : From Coupon to Full-Wafer Experiments.” In ECS Transactions, ed by. F Roozeboom, DL Kwong, PJ Timans, EP Gusev, H Iwai, MC Ozturk, and V Narayanan, 35:117–123. Pennington, NJ, USA: Electrochemical Society (ECS). doi:10.1149/1.3568853.
- Vancouver
- 1.Armini S, Demuynck S, El-mekki Z, Swerts J, Nagar MM, Radisic A, et al. Direct copper electrochemical deposition on Ru-based substrates for advanced interconnects target 30 nm and 1/2 pitch lines : from coupon to full-wafer experiments. In: Roozeboom F, Kwong D, Timans P, Gusev E, Iwai H, Ozturk M, et al., editors. ECS Transactions. Pennington, NJ, USA: Electrochemical Society (ECS); 2011. p. 117–23.
- IEEE
- [1]S. Armini et al., “Direct copper electrochemical deposition on Ru-based substrates for advanced interconnects target 30 nm and 1/2 pitch lines : from coupon to full-wafer experiments,” in ECS Transactions, Montréal, QU, Canada, 2011, vol. 35, no. 2, pp. 117–123.
@inproceedings{2915413,
abstract = {{Extending copper electrochemical deposition to 3x nm nodes and beyond requires a new plating approach that is not constrained by typical PVD copper seed step coverage performance. To this purpose, we propose a copper direct plating process on Plasma Enhanced Atomic Layer Deposition (PEALD) Ru-based resistive substrates, where the Cu seed is deposited in-situ during the front propagation from the edge to the center of the wafer. In order to understand the full-wafer copper direct plating process that occurs on these liners, the effect of plating tool advanced features, applied waveform, plating chemistry and substrate surface activation on the subsequent plated copper nucleation behavior are studied.}},
author = {{Armini, Silvia and Demuynck, Steven and El-mekki, Zaid and Swerts, Johan and Nagar, Magi Margalit and Radisic, Aleksandar and Heylen, Nancy and Beyer, Gerald and Leunissen, Leonardus and Vereecken, Philippe M}},
booktitle = {{ECS Transactions}},
editor = {{Roozeboom, F and Kwong, DL and Timans, PJ and Gusev, EP and Iwai, H and Ozturk, MC and Narayanan, V}},
isbn = {{9781607682134}},
issn = {{1938-5862}},
keywords = {{FILMS,NUCLEATION}},
language = {{eng}},
location = {{Montréal, QU, Canada}},
number = {{2}},
pages = {{117--123}},
publisher = {{Electrochemical Society (ECS)}},
title = {{Direct copper electrochemical deposition on Ru-based substrates for advanced interconnects target 30 nm and 1/2 pitch lines : from coupon to full-wafer experiments}},
url = {{http://doi.org/10.1149/1.3568853}},
volume = {{35}},
year = {{2011}},
}
- Altmetric
- View in Altmetric
- Web of Science
- Times cited: