The kinetics of the low-pressure chemical vapor deposition of polycrystalline silicon from silane
- Author
- WLM WEERTS, M DE CROON and Guy Marin (UGent)
- Organization
Citation
Please use this url to cite or link to this publication: http://hdl.handle.net/1854/LU-282382
- MLA
- WEERTS, WLM, et al. “The Kinetics of the Low-Pressure Chemical Vapor Deposition of Polycrystalline Silicon from Silane.” Journal of Electrochemical Society, vol. 145, no. 4, 1998, pp. 1318–30.
- APA
- WEERTS, W., DE CROON, M., & Marin, G. (1998). The kinetics of the low-pressure chemical vapor deposition of polycrystalline silicon from silane. Journal of Electrochemical Society, 145(4), 1318–1330.
- Chicago author-date
- WEERTS, WLM, M DE CROON, and Guy Marin. 1998. “The Kinetics of the Low-Pressure Chemical Vapor Deposition of Polycrystalline Silicon from Silane.” Journal of Electrochemical Society 145 (4): 1318–30.
- Chicago author-date (all authors)
- WEERTS, WLM, M DE CROON, and Guy Marin. 1998. “The Kinetics of the Low-Pressure Chemical Vapor Deposition of Polycrystalline Silicon from Silane.” Journal of Electrochemical Society 145 (4): 1318–1330.
- Vancouver
- 1.WEERTS W, DE CROON M, Marin G. The kinetics of the low-pressure chemical vapor deposition of polycrystalline silicon from silane. Journal of Electrochemical Society. 1998;145(4):1318–30.
- IEEE
- [1]W. WEERTS, M. DE CROON, and G. Marin, “The kinetics of the low-pressure chemical vapor deposition of polycrystalline silicon from silane,” Journal of Electrochemical Society, vol. 145, no. 4, pp. 1318–1330, 1998.
@article{282382,
author = {{WEERTS, WLM and DE CROON, M and Marin, Guy}},
journal = {{Journal of Electrochemical Society}},
language = {{eng}},
number = {{4}},
pages = {{1318--1330}},
title = {{The kinetics of the low-pressure chemical vapor deposition of polycrystalline silicon from silane}},
volume = {{145}},
year = {{1998}},
}