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High Indium content InGaN films and quantum wells

Wim Van Der Stricht, Koen Jacobs, Ingrid Moerman UGent, Piet Demeester UGent, L CONSIDINE, EJ THRUSH, JA CRAWLEY and P RUTERANA (1997) Proceedings of the Materials Research Society Symposium on Nitride Semiconductors, 1-5 December Boston, Massachusetts, USA. p.107-112
Please use this url to cite or link to this publication:
author
organization
year
type
conference
publication status
published
subject
in
Proceedings of the Materials Research Society Symposium on Nitride Semiconductors, 1-5 December Boston, Massachusetts, USA
pages
107-112 pages
language
English
UGent publication?
yes
classification
C1
id
281706
handle
http://hdl.handle.net/1854/LU-281706
date created
2004-05-24 13:34:00
date last changed
2016-12-19 15:35:27
@inproceedings{281706,
  author       = {Van Der Stricht, Wim and Jacobs, Koen and Moerman, Ingrid and Demeester, Piet and CONSIDINE, L and THRUSH, EJ and CRAWLEY, JA and RUTERANA, P},
  booktitle    = {Proceedings of the Materials Research Society Symposium on Nitride Semiconductors, 1-5 December Boston, Massachusetts, USA},
  language     = {eng},
  pages        = {107--112},
  title        = {High Indium content InGaN films and quantum wells},
  year         = {1997},
}

Chicago
Van Der Stricht, Wim, Koen Jacobs, Ingrid Moerman, Piet Demeester, L CONSIDINE, EJ THRUSH, JA CRAWLEY, and P RUTERANA. 1997. “High Indium Content InGaN Films and Quantum Wells.” In Proceedings of the Materials Research Society Symposium on Nitride Semiconductors, 1-5 December Boston, Massachusetts, USA, 107–112.
APA
Van Der Stricht, W., Jacobs, K., Moerman, I., Demeester, P., CONSIDINE, L., THRUSH, E., CRAWLEY, J., et al. (1997). High Indium content InGaN films and quantum wells. Proceedings of the Materials Research Society Symposium on Nitride Semiconductors, 1-5 December Boston, Massachusetts, USA (pp. 107–112).
Vancouver
1.
Van Der Stricht W, Jacobs K, Moerman I, Demeester P, CONSIDINE L, THRUSH E, et al. High Indium content InGaN films and quantum wells. Proceedings of the Materials Research Society Symposium on Nitride Semiconductors, 1-5 December Boston, Massachusetts, USA. 1997. p. 107–12.
MLA
Van Der Stricht, Wim, Koen Jacobs, Ingrid Moerman, et al. “High Indium Content InGaN Films and Quantum Wells.” Proceedings of the Materials Research Society Symposium on Nitride Semiconductors, 1-5 December Boston, Massachusetts, USA. 1997. 107–112. Print.