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Chicago
Van Der Stricht, Wim, Koen Jacobs, Ingrid Moerman, Piet Demeester, L CONSIDINE, EJ THRUSH, JA CRAWLEY, and P RUTERANA. 1997. “High Indium Content InGaN Films and Quantum Wells.” In Proceedings of the Materials Research Society Symposium on Nitride Semiconductors, 1-5 December Boston, Massachusetts, USA, 107–112.
APA
Van Der Stricht, W., Jacobs, K., Moerman, I., Demeester, P., CONSIDINE, L., THRUSH, E., CRAWLEY, J., et al. (1997). High Indium content InGaN films and quantum wells. Proceedings of the Materials Research Society Symposium on Nitride Semiconductors, 1-5 December Boston, Massachusetts, USA (pp. 107–112).
Vancouver
1.
Van Der Stricht W, Jacobs K, Moerman I, Demeester P, CONSIDINE L, THRUSH E, et al. High Indium content InGaN films and quantum wells. Proceedings of the Materials Research Society Symposium on Nitride Semiconductors, 1-5 December Boston, Massachusetts, USA. 1997. p. 107–12.
MLA
Van Der Stricht, Wim, Koen Jacobs, Ingrid Moerman, et al. “High Indium Content InGaN Films and Quantum Wells.” Proceedings of the Materials Research Society Symposium on Nitride Semiconductors, 1-5 December Boston, Massachusetts, USA. 1997. 107–112. Print.
@inproceedings{281706,
  author       = {Van Der Stricht, Wim and Jacobs, Koen and Moerman, Ingrid and Demeester, Piet and CONSIDINE, L and THRUSH, EJ and CRAWLEY, JA and RUTERANA, P},
  booktitle    = {Proceedings of the Materials Research Society Symposium on Nitride Semiconductors, 1-5 December Boston, Massachusetts, USA},
  language     = {eng},
  pages        = {107--112},
  title        = {High Indium content InGaN films and quantum wells},
  year         = {1997},
}