Investigation of the frequency dispersion effect in the root-model applied to conventional and floating-gate MESFET's
- Author
- Sven Van Den Bosch and Luc Martens (UGent)
- Organization
Citation
Please use this url to cite or link to this publication: http://hdl.handle.net/1854/LU-281684
- MLA
- Van Den Bosch, Sven, and Luc Martens. “Investigation of the Frequency Dispersion Effect in the Root-Model Applied to Conventional and Floating-Gate MESFET’s.” IEEE Transactions on Electron Devices, Vol. 44, Nr. 12, December Pp. 2311-2313, 1997.
- APA
- Van Den Bosch, S., & Martens, L. (1997). Investigation of the frequency dispersion effect in the root-model applied to conventional and floating-gate MESFET’s. IEEE Transactions on Electron Devices, Vol. 44, Nr. 12, December Pp. 2311-2313.
- Chicago author-date
- Van Den Bosch, Sven, and Luc Martens. 1997. “Investigation of the Frequency Dispersion Effect in the Root-Model Applied to Conventional and Floating-Gate MESFET’s.” IEEE Transactions on Electron Devices, Vol. 44, Nr. 12, December Pp. 2311-2313.
- Chicago author-date (all authors)
- Van Den Bosch, Sven, and Luc Martens. 1997. “Investigation of the Frequency Dispersion Effect in the Root-Model Applied to Conventional and Floating-Gate MESFET’s.” IEEE Transactions on Electron Devices, Vol. 44, Nr. 12, December Pp. 2311-2313.
- Vancouver
- 1.Van Den Bosch S, Martens L. Investigation of the frequency dispersion effect in the root-model applied to conventional and floating-gate MESFET’s. IEEE Transactions on Electron Devices, Vol 44, Nr 12, December pp 2311-2313. 1997;
- IEEE
- [1]S. Van Den Bosch and L. Martens, “Investigation of the frequency dispersion effect in the root-model applied to conventional and floating-gate MESFET’s,” IEEE Transactions on Electron Devices, Vol. 44, Nr. 12, December pp. 2311-2313, 1997.
@article{281684, author = {{Van Den Bosch, Sven and Martens, Luc}}, journal = {{IEEE Transactions on Electron Devices, Vol. 44, Nr. 12, December pp. 2311-2313}}, language = {{eng}}, title = {{Investigation of the frequency dispersion effect in the root-model applied to conventional and floating-gate MESFET's}}, year = {{1997}}, }