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MLA
Van Der Stricht, Wim, Ingrid Moerman, Piet Demeester, et al. “MOVPE Growth of High Quality InGaN Films and InGaN/GaN Quantum Wells.” Proceedings of the LEOS Summer Topical Meetings, Gallium Nitride Materials, Processing, and Devices, 11-13 August Montreal, Quebec, Canada. 1997. 27–28. Print.
APA
Van Der Stricht, W., Moerman, I., Demeester, P., THRUSH, E., & CRAWLEY, J. (1997). MOVPE growth of high quality InGaN films and InGaN/GaN quantum wells. Proceedings of the LEOS Summer Topical Meetings, Gallium Nitride Materials, Processing, and Devices, 11-13 August Montreal, Quebec, Canada (pp. 27–28).
Chicago author-date
Van Der Stricht, Wim, Ingrid Moerman, Piet Demeester, EJ THRUSH, and JA CRAWLEY. 1997. “MOVPE Growth of High Quality InGaN Films and InGaN/GaN Quantum Wells.” In Proceedings of the LEOS Summer Topical Meetings, Gallium Nitride Materials, Processing, and Devices, 11-13 August Montreal, Quebec, Canada, 27–28.
Chicago author-date (all authors)
Van Der Stricht, Wim, Ingrid Moerman, Piet Demeester, EJ THRUSH, and JA CRAWLEY. 1997. “MOVPE Growth of High Quality InGaN Films and InGaN/GaN Quantum Wells.” In Proceedings of the LEOS Summer Topical Meetings, Gallium Nitride Materials, Processing, and Devices, 11-13 August Montreal, Quebec, Canada, 27–28.
Vancouver
1.
Van Der Stricht W, Moerman I, Demeester P, THRUSH E, CRAWLEY J. MOVPE growth of high quality InGaN films and InGaN/GaN quantum wells. Proceedings of the LEOS Summer Topical Meetings, Gallium Nitride Materials, Processing, and Devices, 11-13 August Montreal, Quebec, Canada. 1997. p. 27–8.
IEEE
[1]
W. Van Der Stricht, I. Moerman, P. Demeester, E. THRUSH, and J. CRAWLEY, “MOVPE growth of high quality InGaN films and InGaN/GaN quantum wells,” in Proceedings of the LEOS Summer Topical Meetings, Gallium Nitride Materials, Processing, and Devices, 11-13 August Montreal, Quebec, Canada, 1997, pp. 27–28.
@inproceedings{273060,
  author       = {Van Der Stricht, Wim and Moerman, Ingrid and Demeester, Piet and THRUSH, EJ and CRAWLEY, JA},
  booktitle    = {Proceedings of the LEOS Summer Topical Meetings, Gallium Nitride Materials, Processing, and Devices, 11-13 August Montreal, Quebec, Canada},
  language     = {eng},
  pages        = {27--28},
  title        = {MOVPE growth of high quality InGaN films and InGaN/GaN quantum wells},
  year         = {1997},
}