
MOVPE growth optimization of high quality InGaN films
- Author
- Wim Van Der Stricht, Ingrid Moerman (UGent) , Piet Demeester (UGent) , L CONSIDINE, EJ THRUSH and JA CRAWLEY
- Organization
Citation
Please use this url to cite or link to this publication: http://hdl.handle.net/1854/LU-273051
- MLA
- Van Der Stricht, Wim, Ingrid Moerman, Piet Demeester, et al. “MOVPE Growth Optimization of High Quality InGaN Films.” Second European GaN Workshop (EGW-2), The Materials Research Society (MRS) Internet Journal of Nitride Semiconductor Research (http://nsr.mij.mrs.Org/2/16/complete.html), Vol. 2, 11-13 June Valbonne, France (1997): n. pag. Print.
- APA
- Van Der Stricht, W., Moerman, I., Demeester, P., CONSIDINE, L., THRUSH, E., & CRAWLEY, J. (1997). MOVPE growth optimization of high quality InGaN films. Second European GaN Workshop (EGW-2), The Materials Research Society (MRS) Internet Journal of Nitride Semiconductor Research (http://nsr.mij.mrs.Org/2/16/complete.html), Vol. 2, 11-13 June Valbonne, France.
- Chicago author-date
- Van Der Stricht, Wim, Ingrid Moerman, Piet Demeester, L CONSIDINE, EJ THRUSH, and JA CRAWLEY. 1997. “MOVPE Growth Optimization of High Quality InGaN Films.” Second European GaN Workshop (EGW-2), The Materials Research Society (MRS) Internet Journal of Nitride Semiconductor Research (http://nsr.mij.mrs.Org/2/16/complete.html), Vol. 2, 11-13 June Valbonne, France.
- Chicago author-date (all authors)
- Van Der Stricht, Wim, Ingrid Moerman, Piet Demeester, L CONSIDINE, EJ THRUSH, and JA CRAWLEY. 1997. “MOVPE Growth Optimization of High Quality InGaN Films.” Second European GaN Workshop (EGW-2), The Materials Research Society (MRS) Internet Journal of Nitride Semiconductor Research (http://nsr.mij.mrs.Org/2/16/complete.html), Vol. 2, 11-13 June Valbonne, France.
- Vancouver
- 1.Van Der Stricht W, Moerman I, Demeester P, CONSIDINE L, THRUSH E, CRAWLEY J. MOVPE growth optimization of high quality InGaN films. Second European GaN Workshop (EGW-2), The Materials Research Society (MRS) Internet Journal of Nitride Semiconductor Research (http://nsr.mij.mrs.Org/2/16/complete.html), Vol. 2, 11-13 June Valbonne, France. 1997;
- IEEE
- [1]W. Van Der Stricht, I. Moerman, P. Demeester, L. CONSIDINE, E. THRUSH, and J. CRAWLEY, “MOVPE growth optimization of high quality InGaN films,” Second European GaN Workshop (EGW-2), The Materials Research Society (MRS) Internet Journal of Nitride Semiconductor Research (http://nsr.mij.mrs.Org/2/16/complete.html), Vol. 2, 11-13 June Valbonne, France, 1997.
@article{273051, author = {Van Der Stricht, Wim and Moerman, Ingrid and Demeester, Piet and CONSIDINE, L and THRUSH, EJ and CRAWLEY, JA}, journal = {Second European GaN Workshop (EGW-2), The Materials Research Society (MRS) Internet Journal of Nitride Semiconductor Research (http://nsr.mij.mrs.Org/2/16/complete.html), Vol. 2, 11-13 June Valbonne, France}, language = {eng}, title = {MOVPE growth optimization of high quality InGaN films}, year = {1997}, }