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The effect of a GaN nucleation layer on GaN film properties grown by metalorganic chemical vapor deposition

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MLA
Van Der Stricht, Wim, Ingrid Moerman, Piet Demeester, et al. “The Effect of a GaN Nucleation Layer on GaN Film Properties Grown by Metalorganic Chemical Vapor Deposition.” Materials Research Society Symposium Proceedings. Ed. FA Ponce et al. Vol. 395. Pittsburgh, PA, USA: Materials Research Society (MRS), 1995. 231–236. Print.
APA
Van Der Stricht, W., Moerman, I., Demeester, P., Crawley, J., Thrush, E., Middleton, P., Trager Cowan, C., et al. (1995). The effect of a GaN nucleation layer on GaN film properties grown by metalorganic chemical vapor deposition. In F. Ponce, R. Dupuis, S. Nakamura, & J. Edmond (Eds.), Materials Research Society Symposium Proceedings (Vol. 395, pp. 231–236). Presented at the 1st International symposium on Gallium Nitride and Related Materials, Pittsburgh, PA, USA: Materials Research Society (MRS).
Chicago author-date
Van Der Stricht, Wim, Ingrid Moerman, Piet Demeester, JA Crawley, EJ Thrush, PG Middleton, C Trager Cowan, and KP O’Donnell. 1995. “The Effect of a GaN Nucleation Layer on GaN Film Properties Grown by Metalorganic Chemical Vapor Deposition.” In Materials Research Society Symposium Proceedings, ed. FA Ponce, RD Dupuis, S Nakamura, and JA Edmond, 395:231–236. Pittsburgh, PA, USA: Materials Research Society (MRS).
Chicago author-date (all authors)
Van Der Stricht, Wim, Ingrid Moerman, Piet Demeester, JA Crawley, EJ Thrush, PG Middleton, C Trager Cowan, and KP O’Donnell. 1995. “The Effect of a GaN Nucleation Layer on GaN Film Properties Grown by Metalorganic Chemical Vapor Deposition.” In Materials Research Society Symposium Proceedings, ed. FA Ponce, RD Dupuis, S Nakamura, and JA Edmond, 395:231–236. Pittsburgh, PA, USA: Materials Research Society (MRS).
Vancouver
1.
Van Der Stricht W, Moerman I, Demeester P, Crawley J, Thrush E, Middleton P, et al. The effect of a GaN nucleation layer on GaN film properties grown by metalorganic chemical vapor deposition. In: Ponce F, Dupuis R, Nakamura S, Edmond J, editors. Materials Research Society Symposium Proceedings. Pittsburgh, PA, USA: Materials Research Society (MRS); 1995. p. 231–6.
IEEE
[1]
W. Van Der Stricht et al., “The effect of a GaN nucleation layer on GaN film properties grown by metalorganic chemical vapor deposition,” in Materials Research Society Symposium Proceedings, Boston, MA, USA, 1995, vol. 395, pp. 231–236.
@inproceedings{263902,
  author       = {Van Der Stricht, Wim and Moerman, Ingrid and Demeester, Piet and Crawley, JA and Thrush, EJ and Middleton, PG and Trager Cowan, C and O'Donnell, KP},
  booktitle    = {Materials Research Society Symposium Proceedings},
  editor       = {Ponce, FA and Dupuis, RD and Nakamura, S and Edmond, JA},
  isbn         = {9781558992986},
  issn         = {0272-9172},
  language     = {eng},
  location     = {Boston, MA, USA},
  pages        = {231--236},
  publisher    = {Materials Research Society (MRS)},
  title        = {The effect of a GaN nucleation layer on GaN film properties grown by metalorganic chemical vapor deposition},
  volume       = {395},
  year         = {1995},
}