Advanced search

A novel polarisation sensitive opto-electronic switching device for optical information processing

Author
Organization
Abstract
An array compatible, fast and high contrast opto-electronic polarisation sensitive switch is proposed. The element's electrical configuration is a standard p-i-n heterostructure under reverse bias voltage. Its optical configuration is very similar to an Asymmetric Fabry-Perot Resonator (AFPR) where an electroabsorptive i-layer is included between the p and n layers, as in a SEED. Both p and n-layers are Bragg-reflectors. The front mirror of the AFPR is made slightly polarisation dependent using a subwavelength grating etched in the top layer of the p-type reflector stack. We calculate the polarisation dependent overall absorption (photocurrent) and reflection of the device and model the steady state behaviour and polarisation induced switching properties, for an electroabsorption coefficient that increases linearly with applied voltage. Using a standard load-line analysis we show that changing the input polarisation (at constant intensity) from TE to TM can lead to a dramatic decrease or increase in overall reflectivity.
Keywords
subwavelength gratings, self-electro-optic effect devices, photonic switching, polarisation

Citation

Please use this url to cite or link to this publication:

Chicago
Ryvkin, Boris, Jan Danckaert, Christel Van de Poel, Michael Peeters, Hugo Thienpont, Irina Verentennicoff, Bart Dhoedt, and Roel Baets. 1996. “A Novel Polarisation Sensitive Opto-electronic Switching Device for Optical Information Processing.” In Proceedings of SPIE, the International Society for Optical Engineering, ed. Zhores I Alferov, Yuri V Ggulyaev, and Dennis R Pape, 2969:70–75. Bellingham, WA, USA: SPIE, the International Society for Optical Engineering.
APA
Ryvkin, B., Danckaert, J., Van de Poel, C., Peeters, M., Thienpont, H., Verentennicoff, I., Dhoedt, B., et al. (1996). A novel polarisation sensitive opto-electronic switching device for optical information processing. In Z. I. Alferov, Y. V. Ggulyaev, & D. R. Pape (Eds.), Proceedings of SPIE, the International Society for Optical Engineering (Vol. 2969, pp. 70–75). Presented at the 2nd International conference on Optical Information Processing, Bellingham, WA, USA: SPIE, the International Society for Optical Engineering.
Vancouver
1.
Ryvkin B, Danckaert J, Van de Poel C, Peeters M, Thienpont H, Verentennicoff I, et al. A novel polarisation sensitive opto-electronic switching device for optical information processing. In: Alferov ZI, Ggulyaev YV, Pape DR, editors. Proceedings of SPIE, the International Society for Optical Engineering. Bellingham, WA, USA: SPIE, the International Society for Optical Engineering; 1996. p. 70–5.
MLA
Ryvkin, Boris, Jan Danckaert, Christel Van de Poel, et al. “A Novel Polarisation Sensitive Opto-electronic Switching Device for Optical Information Processing.” Proceedings of SPIE, the International Society for Optical Engineering. Ed. Zhores I Alferov, Yuri V Ggulyaev, & Dennis R Pape. Vol. 2969. Bellingham, WA, USA: SPIE, the International Society for Optical Engineering, 1996. 70–75. Print.
@inproceedings{263787,
  abstract     = {An array compatible, fast and high contrast opto-electronic polarisation sensitive switch is proposed. The element's electrical configuration is a standard p-i-n heterostructure under reverse bias voltage. Its optical configuration is very similar to an Asymmetric Fabry-Perot Resonator (AFPR) where an electroabsorptive i-layer is included between the p and n layers, as in a SEED. Both p and n-layers are Bragg-reflectors. The front mirror of the AFPR is made slightly polarisation dependent using a subwavelength grating etched in the top layer of the p-type reflector stack. We calculate the polarisation dependent overall absorption (photocurrent) and reflection of the device and model the steady state behaviour and polarisation induced switching properties, for an electroabsorption coefficient that increases linearly with applied voltage. Using a standard load-line analysis we show that changing the input polarisation (at constant intensity) from TE to TM can lead to a dramatic decrease or increase in overall reflectivity.},
  author       = {Ryvkin, Boris and Danckaert, Jan and Van de Poel, Christel and Peeters, Michael and Thienpont, Hugo and Verentennicoff, Irina and Dhoedt, Bart and Baets, Roel},
  booktitle    = {Proceedings of SPIE, the International Society for Optical Engineering},
  editor       = {Alferov, Zhores I and Ggulyaev, Yuri V and Pape, Dennis R},
  isbn         = {9780819423757},
  issn         = {0277-786X},
  keywords     = {subwavelength gratings,self-electro-optic effect devices,photonic switching,polarisation},
  language     = {eng},
  location     = {St Petersburg, Russia},
  pages        = {70--75},
  publisher    = {SPIE, the International Society for Optical Engineering},
  title        = {A novel polarisation sensitive opto-electronic switching device for optical information processing},
  url          = {http://dx.doi.org/10.1117/12.262557},
  volume       = {2969},
  year         = {1996},
}

Altmetric
View in Altmetric