Advanced search

Dark current reduction for 2.5 µm wavelength, 2% mismatched InGaAs photodetectors, by changing bufferlayer structure and growth temperature

Author
Organization

Citation

Please use this url to cite or link to this publication:

Chicago
D’Hondt, Mark, Ingrid Moerman, and Piet Demeester. 1996. “Dark Current Reduction for 2.5 Μm Wavelength, 2% Mismatched InGaAs Photodetectors, by Changing Bufferlayer Structure and Growth Temperature.” In 1996 Eighth International Conference on Indium Phosphide and Related Materials, 494–495. New York, NY, USA: IEEE.
APA
D’Hondt, Mark, Moerman, I., & Demeester, P. (1996). Dark current reduction for 2.5 µm wavelength, 2% mismatched InGaAs photodetectors, by changing bufferlayer structure and growth temperature. 1996 Eighth international conference on indium phosphide and related materials (pp. 494–495). Presented at the 8th International Conference on Indium Phosphide and Related Materials (IPRM 96), New York, NY, USA: IEEE.
Vancouver
1.
D’Hondt M, Moerman I, Demeester P. Dark current reduction for 2.5 µm wavelength, 2% mismatched InGaAs photodetectors, by changing bufferlayer structure and growth temperature. 1996 Eighth international conference on indium phosphide and related materials. New York, NY, USA: IEEE; 1996. p. 494–5.
MLA
D’Hondt, Mark, Ingrid Moerman, and Piet Demeester. “Dark Current Reduction for 2.5 Μm Wavelength, 2% Mismatched InGaAs Photodetectors, by Changing Bufferlayer Structure and Growth Temperature.” 1996 Eighth International Conference on Indium Phosphide and Related Materials. New York, NY, USA: IEEE, 1996. 494–495. Print.
@inproceedings{263698,
  author       = {D'Hondt, Mark and Moerman, Ingrid and Demeester, Piet},
  booktitle    = {1996 Eighth international conference on indium phosphide and related materials},
  isbn         = {9780780332836},
  language     = {eng},
  location     = {Schw{\"a}bisch Gm{\"u}nd, Germany},
  pages        = {494--495},
  publisher    = {IEEE},
  title        = {Dark current reduction for 2.5 {\textmu}m wavelength, 2\% mismatched InGaAs photodetectors, by changing bufferlayer structure and growth temperature},
  url          = {http://dx.doi.org/10.1109/ICIPRM.1996.492290},
  year         = {1996},
}

Altmetric
View in Altmetric