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Abstract
A model for the poly-CdSe TFT is proposed, based on recent understandings of the behaviour of polycrystalline semiconductors. The importance of adsorbed oxygen in CdSe films and the role of donor metals is highlighted. The model also explains the formation of metal ohmic contacts on CdSe by low temperature annealing.

Citation

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MLA
De Baets, Johan, André Van Calster, Ann De Cubber, et al. “Modelling poly-CdSe TFTs for AMLCD.” Proceedings of the Second Symposium on Thin Film Transistor Technologies. Ed. Y Kuo. 1995. 228–232. Print.
APA
De Baets, Johan, Van Calster, A., De Cubber, A., De Smet, H., & Vanfleteren, J. (1995). Modelling poly-CdSe TFTs for AMLCD. In Y. Kuo (Ed.), Proceedings of the Second Symposium on Thin Film Transistor Technologies (pp. 228–232). Presented at the Proceedings of Second International Symposium Thin Film Transistor Technologies.
Chicago author-date
De Baets, Johan, André Van Calster, Ann De Cubber, Herbert De Smet, and Jan Vanfleteren. 1995. “Modelling poly-CdSe TFTs for AMLCD.” In Proceedings of the Second Symposium on Thin Film Transistor Technologies, ed. Y Kuo, 228–232.
Chicago author-date (all authors)
De Baets, Johan, André Van Calster, Ann De Cubber, Herbert De Smet, and Jan Vanfleteren. 1995. “Modelling poly-CdSe TFTs for AMLCD.” In Proceedings of the Second Symposium on Thin Film Transistor Technologies, ed. Y Kuo, 228–232.
Vancouver
1.
De Baets J, Van Calster A, De Cubber A, De Smet H, Vanfleteren J. Modelling poly-CdSe TFTs for AMLCD. In: Kuo Y, editor. Proceedings of the Second Symposium on Thin Film Transistor Technologies. 1995. p. 228–32.
IEEE
[1]
J. De Baets, A. Van Calster, A. De Cubber, H. De Smet, and J. Vanfleteren, “Modelling poly-CdSe TFTs for AMLCD,” in Proceedings of the Second Symposium on Thin Film Transistor Technologies, Miami, Florida, USA, 1995, pp. 228–232.
@inproceedings{245975,
  abstract     = {A model for the poly-CdSe TFT is proposed, based on recent understandings of the behaviour of polycrystalline semiconductors. The importance of adsorbed oxygen in CdSe films and the role of donor metals is highlighted. The model also explains the formation of metal ohmic contacts on CdSe by low temperature annealing.},
  author       = {De Baets, Johan and Van Calster, André and De Cubber, Ann and De Smet, Herbert and Vanfleteren, Jan},
  booktitle    = {Proceedings of the Second Symposium on Thin Film Transistor Technologies},
  editor       = {Kuo, Y},
  language     = {eng},
  location     = {Miami, Florida, USA},
  pages        = {228--232},
  title        = {Modelling poly-CdSe TFTs for AMLCD},
  year         = {1995},
}

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