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Simultaneous elimination of electrically active defects in Si/SiO2 structures by implanted fluorine

(1993) MICROELECTRONIC ENGINEERING. 22(1-4). p.93-96
Author
Organization
Abstract
The effect of fluorine implantation on oxide and interface trapping centres in Si/SiO2 structures has been investigated using charge injection techniques. Significant reduction of the density of various defects has been observed for ultra-dry and wet oxides after F-implantation. The elimination of the traps takes place in a correlated manner despite the different nature of the centres. The catalytic action of fluorine via strain relaxation or release of defect passivating species is proposed to be the cause of the observed effect.

Citation

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MLA
Afanas’ev, VV, Michel Depas, JMM De Nijs, et al. “Simultaneous Elimination of Electrically Active Defects in Si/SiO2 Structures by Implanted Fluorine.” MICROELECTRONIC ENGINEERING 22.1-4 (1993): 93–96. Print.
APA
Afanas’ev, V., Depas, M., De Nijs, J., & Balk, P. (1993). Simultaneous elimination of electrically active defects in Si/SiO2 structures by implanted fluorine. MICROELECTRONIC ENGINEERING, 22(1-4), 93–96.
Chicago author-date
Afanas’ev, VV, Michel Depas, JMM De Nijs, and P Balk. 1993. “Simultaneous Elimination of Electrically Active Defects in Si/SiO2 Structures by Implanted Fluorine.” Microelectronic Engineering 22 (1-4): 93–96.
Chicago author-date (all authors)
Afanas’ev, VV, Michel Depas, JMM De Nijs, and P Balk. 1993. “Simultaneous Elimination of Electrically Active Defects in Si/SiO2 Structures by Implanted Fluorine.” Microelectronic Engineering 22 (1-4): 93–96.
Vancouver
1.
Afanas’ev V, Depas M, De Nijs J, Balk P. Simultaneous elimination of electrically active defects in Si/SiO2 structures by implanted fluorine. MICROELECTRONIC ENGINEERING. 1993;22(1-4):93–6.
IEEE
[1]
V. Afanas’ev, M. Depas, J. De Nijs, and P. Balk, “Simultaneous elimination of electrically active defects in Si/SiO2 structures by implanted fluorine,” MICROELECTRONIC ENGINEERING, vol. 22, no. 1–4, pp. 93–96, 1993.
@article{231346,
  abstract     = {The effect of fluorine implantation on oxide and interface trapping centres in Si/SiO2 structures has been investigated using charge injection techniques. Significant reduction of the density of various defects has been observed for ultra-dry and wet oxides after F-implantation. The elimination of the traps takes place in a correlated manner despite the different nature of the centres. The catalytic action of fluorine via strain relaxation or release of defect passivating species is proposed to be the cause of the observed effect.},
  author       = {Afanas'ev, VV and Depas, Michel and De Nijs, JMM and Balk, P},
  issn         = {0167-9317},
  journal      = {MICROELECTRONIC ENGINEERING},
  language     = {eng},
  number       = {1-4},
  pages        = {93--96},
  title        = {Simultaneous elimination of electrically active defects in Si/SiO2 structures by implanted fluorine},
  url          = {http://dx.doi.org/10.1016/0167-9317(93)90138-U},
  volume       = {22},
  year         = {1993},
}

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