Advanced search
1 file | 224.27 KB

Monolithic integration of GaAs MESFET and InP/InGaAsP 2x2 optical switch

(1991) ELECTRONICS LETTERS. 27(25). p.2339-2340
Author
Organization
Abstract
An optical switching OEIC (optoelectronic integrated circuit), consisting of a GaAs MESFET and an InP/InGaAsP 2 x 2 buried waveguide optical switch, is reported for the first time. Fully monolithic integration is obtained by heteroepitaxial GaAs-on-InP growth and photolithographical interconnection. The combined OEIC allows switching voltages of about 1 V with an extinction ratio of -6 dB.
Keywords
OPTICAL SWITCHING, INTEGRATED OPTICS

Downloads

  • (...).pdf
    • full text
    • |
    • UGent only
    • |
    • PDF
    • |
    • 224.27 KB

Citation

Please use this url to cite or link to this publication:

Chicago
Pollentier, Ivan, Luc Buydens, Piet Demeester, Peter Van Daele, A Enard, E Lallier, G Glastre, and D Rondi. 1991. “Monolithic Integration of GaAs MESFET and InP/InGaAsP 2x2 Optical Switch.” Electronics Letters 27 (25): 2339–2340.
APA
Pollentier, I., Buydens, L., Demeester, P., Van Daele, P., Enard, A., Lallier, E., Glastre, G., et al. (1991). Monolithic integration of GaAs MESFET and InP/InGaAsP 2x2 optical switch. ELECTRONICS LETTERS, 27(25), 2339–2340.
Vancouver
1.
Pollentier I, Buydens L, Demeester P, Van Daele P, Enard A, Lallier E, et al. Monolithic integration of GaAs MESFET and InP/InGaAsP 2x2 optical switch. ELECTRONICS LETTERS. 1991;27(25):2339–40.
MLA
Pollentier, Ivan, Luc Buydens, Piet Demeester, et al. “Monolithic Integration of GaAs MESFET and InP/InGaAsP 2x2 Optical Switch.” ELECTRONICS LETTERS 27.25 (1991): 2339–2340. Print.
@article{225950,
  abstract     = {An optical switching OEIC (optoelectronic integrated circuit), consisting of a GaAs MESFET and an InP/InGaAsP 2 x 2 buried waveguide optical switch, is reported for the first time. Fully monolithic integration is obtained by heteroepitaxial GaAs-on-InP growth and photolithographical interconnection. The combined OEIC allows switching voltages of about 1 V with an extinction ratio of -6 dB.},
  author       = {Pollentier, Ivan and Buydens, Luc and Demeester, Piet and Van Daele, Peter and Enard, A and Lallier, E and Glastre, G and Rondi, D},
  issn         = {0013-5194},
  journal      = {ELECTRONICS LETTERS},
  keyword      = {OPTICAL SWITCHING,INTEGRATED OPTICS},
  language     = {eng},
  number       = {25},
  pages        = {2339--2340},
  title        = {Monolithic integration of GaAs MESFET and InP/InGaAsP 2x2 optical switch},
  url          = {http://dx.doi.org/10.1049/el:19911448},
  volume       = {27},
  year         = {1991},
}

Altmetric
View in Altmetric