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Monolithic integration of GaAs MESFET and InP/InGaAsP 2x2 optical switch

Ivan Pollentier, Luc Buydens, Piet Demeester UGent, Peter Van Daele UGent, A Enard, E Lallier, G Glastre and D Rondi (1991) ELECTRONICS LETTERS. 27(25). p.2339-2340
abstract
An optical switching OEIC (optoelectronic integrated circuit), consisting of a GaAs MESFET and an InP/InGaAsP 2 x 2 buried waveguide optical switch, is reported for the first time. Fully monolithic integration is obtained by heteroepitaxial GaAs-on-InP growth and photolithographical interconnection. The combined OEIC allows switching voltages of about 1 V with an extinction ratio of -6 dB.
Please use this url to cite or link to this publication:
author
organization
year
type
journalArticle (original)
publication status
published
subject
keyword
OPTICAL SWITCHING, INTEGRATED OPTICS
journal title
ELECTRONICS LETTERS
Electron. Lett.
volume
27
issue
25
pages
2339 - 2340
Web of Science type
Article
ISSN
0013-5194
DOI
10.1049/el:19911448
language
English
UGent publication?
yes
classification
A1
copyright statement
I have transferred the copyright for this publication to the publisher
id
225950
handle
http://hdl.handle.net/1854/LU-225950
date created
2004-05-24 13:24:00
date last changed
2016-12-19 15:38:51
@article{225950,
  abstract     = {An optical switching OEIC (optoelectronic integrated circuit), consisting of a GaAs MESFET and an InP/InGaAsP 2 x 2 buried waveguide optical switch, is reported for the first time. Fully monolithic integration is obtained by heteroepitaxial GaAs-on-InP growth and photolithographical interconnection. The combined OEIC allows switching voltages of about 1 V with an extinction ratio of -6 dB.},
  author       = {Pollentier, Ivan and Buydens, Luc and Demeester, Piet and Van Daele, Peter and Enard, A and Lallier, E and Glastre, G and Rondi, D},
  issn         = {0013-5194},
  journal      = {ELECTRONICS LETTERS},
  keyword      = {OPTICAL SWITCHING,INTEGRATED OPTICS},
  language     = {eng},
  number       = {25},
  pages        = {2339--2340},
  title        = {Monolithic integration of GaAs MESFET and InP/InGaAsP 2x2 optical switch},
  url          = {http://dx.doi.org/10.1049/el:19911448},
  volume       = {27},
  year         = {1991},
}

Chicago
Pollentier, Ivan, Luc Buydens, Piet Demeester, Peter Van Daele, A Enard, E Lallier, G Glastre, and D Rondi. 1991. “Monolithic Integration of GaAs MESFET and InP/InGaAsP 2x2 Optical Switch.” Electronics Letters 27 (25): 2339–2340.
APA
Pollentier, I., Buydens, L., Demeester, P., Van Daele, P., Enard, A., Lallier, E., Glastre, G., et al. (1991). Monolithic integration of GaAs MESFET and InP/InGaAsP 2x2 optical switch. ELECTRONICS LETTERS, 27(25), 2339–2340.
Vancouver
1.
Pollentier I, Buydens L, Demeester P, Van Daele P, Enard A, Lallier E, et al. Monolithic integration of GaAs MESFET and InP/InGaAsP 2x2 optical switch. ELECTRONICS LETTERS. 1991;27(25):2339–40.
MLA
Pollentier, Ivan, Luc Buydens, Piet Demeester, et al. “Monolithic Integration of GaAs MESFET and InP/InGaAsP 2x2 Optical Switch.” ELECTRONICS LETTERS 27.25 (1991): 2339–2340. Print.