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Low temperature annealing of damage induced by SiCL* reactive ion etching.

D LOOTENS, Paul Clauws (UGent) , Peter Van Daele (UGent) and Piet Demeester (UGent)
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Chicago
LOOTENS, D, Paul Clauws, Peter Van Daele, and Piet Demeester. 1991. “Low Temperature Annealing of Damage Induced by SiCL* Reactive Ion Etching.” In Le Vide, Les Couches Minces, Suppl., 256, Pp. 292-294, 4 Figg.
APA
LOOTENS, D., Clauws, P., Van Daele, P., & Demeester, P. (1991). Low temperature annealing of damage induced by SiCL* reactive ion etching. Le Vide, Les Couches Minces, suppl., 256, pp. 292-294, 4 figg.
Vancouver
1.
LOOTENS D, Clauws P, Van Daele P, Demeester P. Low temperature annealing of damage induced by SiCL* reactive ion etching. Le Vide, Les Couches Minces, suppl., 256, pp. 292-294, 4 figg. 1991.
MLA
LOOTENS, D, Paul Clauws, Peter Van Daele, et al. “Low Temperature Annealing of Damage Induced by SiCL* Reactive Ion Etching.” Le Vide, Les Couches Minces, Suppl., 256, Pp. 292-294, 4 Figg. 1991. Print.
@inproceedings{221016,
  author       = {LOOTENS, D and Clauws, Paul and Van Daele, Peter and Demeester, Piet},
  booktitle    = {Le Vide, Les Couches Minces, suppl., 256, pp. 292-294, 4 figg},
  language     = {eng},
  title        = {Low temperature annealing of damage induced by SiCL* reactive ion etching.},
  year         = {1991},
}