Deep levels in oxygenated n-type high-resistivity FZ silicon before and after a low-temperature hydrogenation step
- Author
- E SIMOEN, C CLAEYS, R JOB, AG ULYASHIN, WR FAHRNER, G TONELLI, Olivier De Gryse and Paul Clauws (UGent)
- Organization
Citation
Please use this url to cite or link to this publication: http://hdl.handle.net/1854/LU-218516
- MLA
- SIMOEN, E, C CLAEYS, R JOB, et al. “Deep Levels in Oxygenated N-type High-resistivity FZ Silicon Before and After a Low-temperature Hydrogenation Step.” JOURNAL OF THE ELECTROCHEMICAL SOCIETY 150.9 (2003): 520. Print.
- APA
- SIMOEN, E., CLAEYS, C., JOB, R., ULYASHIN, A., FAHRNER, W., TONELLI, G., De Gryse, O., et al. (2003). Deep levels in oxygenated n-type high-resistivity FZ silicon before and after a low-temperature hydrogenation step. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 150(9), 520.
- Chicago author-date
- SIMOEN, E, C CLAEYS, R JOB, AG ULYASHIN, WR FAHRNER, G TONELLI, Olivier De Gryse, and Paul Clauws. 2003. “Deep Levels in Oxygenated N-type High-resistivity FZ Silicon Before and After a Low-temperature Hydrogenation Step.” Journal of the Electrochemical Society 150 (9): 520.
- Chicago author-date (all authors)
- SIMOEN, E, C CLAEYS, R JOB, AG ULYASHIN, WR FAHRNER, G TONELLI, Olivier De Gryse, and Paul Clauws. 2003. “Deep Levels in Oxygenated N-type High-resistivity FZ Silicon Before and After a Low-temperature Hydrogenation Step.” Journal of the Electrochemical Society 150 (9): 520.
- Vancouver
- 1.SIMOEN E, CLAEYS C, JOB R, ULYASHIN A, FAHRNER W, TONELLI G, et al. Deep levels in oxygenated n-type high-resistivity FZ silicon before and after a low-temperature hydrogenation step. JOURNAL OF THE ELECTROCHEMICAL SOCIETY. ELECTROCHEMICAL SOC INC; 2003;150(9):520.
- IEEE
- [1]E. SIMOEN et al., “Deep levels in oxygenated n-type high-resistivity FZ silicon before and after a low-temperature hydrogenation step,” JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 150, no. 9, p. 520, 2003.
@article{218516,
author = {SIMOEN, E and CLAEYS, C and JOB, R and ULYASHIN, AG and FAHRNER, WR and TONELLI, G and De Gryse, Olivier and Clauws, Paul},
issn = {0013-4651},
journal = {JOURNAL OF THE ELECTROCHEMICAL SOCIETY},
language = {eng},
number = {9},
pages = {G520-G526},
publisher = {ELECTROCHEMICAL SOC INC},
title = {Deep levels in oxygenated n-type high-resistivity FZ silicon before and after a low-temperature hydrogenation step},
volume = {150},
year = {2003},
}