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Deep levels in oxygenated n-type high-resistivity FZ silicon before and after a low-temperature hydrogenation step

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MLA
SIMOEN, E, C CLAEYS, R JOB, et al. “Deep Levels in Oxygenated N-type High-resistivity FZ Silicon Before and After a Low-temperature Hydrogenation Step.” JOURNAL OF THE ELECTROCHEMICAL SOCIETY 150.9 (2003): 520. Print.
APA
SIMOEN, E., CLAEYS, C., JOB, R., ULYASHIN, A., FAHRNER, W., TONELLI, G., De Gryse, O., et al. (2003). Deep levels in oxygenated n-type high-resistivity FZ silicon before and after a low-temperature hydrogenation step. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 150(9), 520.
Chicago author-date
SIMOEN, E, C CLAEYS, R JOB, AG ULYASHIN, WR FAHRNER, G TONELLI, Olivier De Gryse, and Paul Clauws. 2003. “Deep Levels in Oxygenated N-type High-resistivity FZ Silicon Before and After a Low-temperature Hydrogenation Step.” Journal of the Electrochemical Society 150 (9): 520.
Chicago author-date (all authors)
SIMOEN, E, C CLAEYS, R JOB, AG ULYASHIN, WR FAHRNER, G TONELLI, Olivier De Gryse, and Paul Clauws. 2003. “Deep Levels in Oxygenated N-type High-resistivity FZ Silicon Before and After a Low-temperature Hydrogenation Step.” Journal of the Electrochemical Society 150 (9): 520.
Vancouver
1.
SIMOEN E, CLAEYS C, JOB R, ULYASHIN A, FAHRNER W, TONELLI G, et al. Deep levels in oxygenated n-type high-resistivity FZ silicon before and after a low-temperature hydrogenation step. JOURNAL OF THE ELECTROCHEMICAL SOCIETY. ELECTROCHEMICAL SOC INC; 2003;150(9):520.
IEEE
[1]
E. SIMOEN et al., “Deep levels in oxygenated n-type high-resistivity FZ silicon before and after a low-temperature hydrogenation step,” JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 150, no. 9, p. 520, 2003.
@article{218516,
  author       = {SIMOEN, E and CLAEYS, C and JOB, R and ULYASHIN, AG and FAHRNER, WR and TONELLI, G and De Gryse, Olivier and Clauws, Paul},
  issn         = {0013-4651},
  journal      = {JOURNAL OF THE ELECTROCHEMICAL SOCIETY},
  language     = {eng},
  number       = {9},
  pages        = {G520-G526},
  publisher    = {ELECTROCHEMICAL SOC INC},
  title        = {Deep levels in oxygenated n-type high-resistivity FZ silicon before and after a low-temperature hydrogenation step},
  volume       = {150},
  year         = {2003},
}

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