Deep levels in high-temperature 1 MeV electron-irradiated n-type Czochralski silicon
(2003)
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS.
42(12).
p.7184-7188
- Author
- E SIMOEN, JM RAFI, C CLAEYS, V NEIMASH, A KRAITCHINSKII, M KRAS'KO, V TISCHENKO, V VOITOVYCH, Jorg Versluys and Paul Clauws (UGent)
- Organization
Citation
Please use this url to cite or link to this publication: http://hdl.handle.net/1854/LU-218495
- MLA
- SIMOEN, E., et al. “Deep Levels in High-Temperature 1 MeV Electron-Irradiated n-Type Czochralski Silicon.” JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, vol. 42, no. 12, INST PURE APPLIED PHYSICS, 2003, pp. 7184–88.
- APA
- SIMOEN, E., RAFI, J., CLAEYS, C., NEIMASH, V., KRAITCHINSKII, A., KRAS’KO, M., … Clauws, P. (2003). Deep levels in high-temperature 1 MeV electron-irradiated n-type Czochralski silicon. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 42(12), 7184–7188.
- Chicago author-date
- SIMOEN, E, JM RAFI, C CLAEYS, V NEIMASH, A KRAITCHINSKII, M KRAS’KO, V TISCHENKO, V VOITOVYCH, Jorg Versluys, and Paul Clauws. 2003. “Deep Levels in High-Temperature 1 MeV Electron-Irradiated n-Type Czochralski Silicon.” JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 42 (12): 7184–88.
- Chicago author-date (all authors)
- SIMOEN, E, JM RAFI, C CLAEYS, V NEIMASH, A KRAITCHINSKII, M KRAS’KO, V TISCHENKO, V VOITOVYCH, Jorg Versluys, and Paul Clauws. 2003. “Deep Levels in High-Temperature 1 MeV Electron-Irradiated n-Type Czochralski Silicon.” JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 42 (12): 7184–7188.
- Vancouver
- 1.SIMOEN E, RAFI J, CLAEYS C, NEIMASH V, KRAITCHINSKII A, KRAS’KO M, et al. Deep levels in high-temperature 1 MeV electron-irradiated n-type Czochralski silicon. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS. 2003;42(12):7184–8.
- IEEE
- [1]E. SIMOEN et al., “Deep levels in high-temperature 1 MeV electron-irradiated n-type Czochralski silicon,” JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, vol. 42, no. 12, pp. 7184–7188, 2003.
@article{218495,
author = {{SIMOEN, E and RAFI, JM and CLAEYS, C and NEIMASH, V and KRAITCHINSKII, A and KRAS'KO, M and TISCHENKO, V and VOITOVYCH, V and Versluys, Jorg and Clauws, Paul}},
issn = {{0021-4922}},
journal = {{JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS}},
language = {{eng}},
number = {{12}},
pages = {{7184--7188}},
publisher = {{INST PURE APPLIED PHYSICS}},
title = {{Deep levels in high-temperature 1 MeV electron-irradiated n-type Czochralski silicon}},
volume = {{42}},
year = {{2003}},
}