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A model for the formation of lattice defects at silicon oxide precipitates in silicon

(2003) PHYSICA B-CONDENSED MATTER. 340. p.1056-1060
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MLA
Vanhellemont, Jan, Olivier De Gryse, and Paul Clauws. “A Model for the Formation of Lattice Defects at Silicon Oxide Precipitates in Silicon.” PHYSICA B-CONDENSED MATTER 340 (2003): 1056–1060. Print.
APA
Vanhellemont, J., De Gryse, O., & Clauws, P. (2003). A model for the formation of lattice defects at silicon oxide precipitates in silicon. PHYSICA B-CONDENSED MATTER, 340, 1056–1060.
Chicago author-date
Vanhellemont, Jan, Olivier De Gryse, and Paul Clauws. 2003. “A Model for the Formation of Lattice Defects at Silicon Oxide Precipitates in Silicon.” Physica B-condensed Matter 340: 1056–1060.
Chicago author-date (all authors)
Vanhellemont, Jan, Olivier De Gryse, and Paul Clauws. 2003. “A Model for the Formation of Lattice Defects at Silicon Oxide Precipitates in Silicon.” Physica B-condensed Matter 340: 1056–1060.
Vancouver
1.
Vanhellemont J, De Gryse O, Clauws P. A model for the formation of lattice defects at silicon oxide precipitates in silicon. PHYSICA B-CONDENSED MATTER. Elsevier Science; 2003;340:1056–60.
IEEE
[1]
J. Vanhellemont, O. De Gryse, and P. Clauws, “A model for the formation of lattice defects at silicon oxide precipitates in silicon,” PHYSICA B-CONDENSED MATTER, vol. 340, pp. 1056–1060, 2003.
@article{218488,
  author       = {Vanhellemont, Jan and De Gryse, Olivier and Clauws, Paul},
  issn         = {0921-4526},
  journal      = {PHYSICA B-CONDENSED MATTER},
  language     = {eng},
  pages        = {1056--1060},
  publisher    = {Elsevier Science},
  title        = {A model for the formation of lattice defects at silicon oxide precipitates in silicon},
  volume       = {340},
  year         = {2003},
}

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