A model for the formation of lattice defects at silicon oxide precipitates in silicon
- Author
- Jan Vanhellemont (UGent) , Olivier De Gryse and Paul Clauws (UGent)
- Organization
Citation
Please use this url to cite or link to this publication: http://hdl.handle.net/1854/LU-218488
- MLA
- Vanhellemont, Jan, Olivier De Gryse, and Paul Clauws. “A Model for the Formation of Lattice Defects at Silicon Oxide Precipitates in Silicon.” PHYSICA B-CONDENSED MATTER 340 (2003): 1056–1060. Print.
- APA
- Vanhellemont, J., De Gryse, O., & Clauws, P. (2003). A model for the formation of lattice defects at silicon oxide precipitates in silicon. PHYSICA B-CONDENSED MATTER, 340, 1056–1060.
- Chicago author-date
- Vanhellemont, Jan, Olivier De Gryse, and Paul Clauws. 2003. “A Model for the Formation of Lattice Defects at Silicon Oxide Precipitates in Silicon.” Physica B-condensed Matter 340: 1056–1060.
- Chicago author-date (all authors)
- Vanhellemont, Jan, Olivier De Gryse, and Paul Clauws. 2003. “A Model for the Formation of Lattice Defects at Silicon Oxide Precipitates in Silicon.” Physica B-condensed Matter 340: 1056–1060.
- Vancouver
- 1.Vanhellemont J, De Gryse O, Clauws P. A model for the formation of lattice defects at silicon oxide precipitates in silicon. PHYSICA B-CONDENSED MATTER. Elsevier Science; 2003;340:1056–60.
- IEEE
- [1]J. Vanhellemont, O. De Gryse, and P. Clauws, “A model for the formation of lattice defects at silicon oxide precipitates in silicon,” PHYSICA B-CONDENSED MATTER, vol. 340, pp. 1056–1060, 2003.
@article{218488,
author = {Vanhellemont, Jan and De Gryse, Olivier and Clauws, Paul},
issn = {0921-4526},
journal = {PHYSICA B-CONDENSED MATTER},
language = {eng},
pages = {1056--1060},
publisher = {Elsevier Science},
title = {A model for the formation of lattice defects at silicon oxide precipitates in silicon},
volume = {340},
year = {2003},
}