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Towards implementation of a nickel silicide process for CMOS technologies

(2003) MICROELECTRONIC ENGINEERING. 70(2-4). p.144-157
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MLA
LAVOIE, C, FM D’HEURLE, Christophe Detavernier, et al. “Towards Implementation of a Nickel Silicide Process for CMOS Technologies.” MICROELECTRONIC ENGINEERING 70.2-4 (2003): 144–157. Print.
APA
LAVOIE, C., D’HEURLE, F., Detavernier, C., & CABRAL, C. (2003). Towards implementation of a nickel silicide process for CMOS technologies. MICROELECTRONIC ENGINEERING, 70(2-4), 144–157.
Chicago author-date
LAVOIE, C, FM D’HEURLE, Christophe Detavernier, and C CABRAL. 2003. “Towards Implementation of a Nickel Silicide Process for CMOS Technologies.” Microelectronic Engineering 70 (2-4): 144–157.
Chicago author-date (all authors)
LAVOIE, C, FM D’HEURLE, Christophe Detavernier, and C CABRAL. 2003. “Towards Implementation of a Nickel Silicide Process for CMOS Technologies.” Microelectronic Engineering 70 (2-4): 144–157.
Vancouver
1.
LAVOIE C, D’HEURLE F, Detavernier C, CABRAL C. Towards implementation of a nickel silicide process for CMOS technologies. MICROELECTRONIC ENGINEERING. Elsevier Science; 2003;70(2-4):144–57.
IEEE
[1]
C. LAVOIE, F. D’HEURLE, C. Detavernier, and C. CABRAL, “Towards implementation of a nickel silicide process for CMOS technologies,” MICROELECTRONIC ENGINEERING, vol. 70, no. 2–4, pp. 144–157, 2003.
@article{216628,
  author       = {LAVOIE, C and D'HEURLE, FM and Detavernier, Christophe and CABRAL, C},
  issn         = {0167-9317},
  journal      = {MICROELECTRONIC ENGINEERING},
  language     = {eng},
  number       = {2-4},
  pages        = {144--157},
  publisher    = {Elsevier Science},
  title        = {Towards implementation of a nickel silicide process for CMOS technologies},
  volume       = {70},
  year         = {2003},
}

Web of Science
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