Advanced search
1 file | 193.64 KB Add to list

Evidence of an impurity band at an n-GaN/sapphire interface

(2003) DIAMOND AND RELATED MATERIALS. 12(3-7). p.1127-1132
Author
Organization
Keywords
reactive ion etching, GaN, electrical properties characterization, interface electronic properties, FIELD-EFFECT TRANSISTORS, MOLECULAR-BEAM EPITAXY, GAN FILMS, BULK GAN, MOBILITY, CONDUCTION, SAPPHIRE, LAYER

Downloads

  • (...).pdf
    • full text
    • |
    • UGent only
    • |
    • PDF
    • |
    • 193.64 KB

Citation

Please use this url to cite or link to this publication:

MLA
Mavroidis, C, JJ Harris, RB Jackman, et al. “Evidence of an Impurity Band at an n-GaN/sapphire Interface.” DIAMOND AND RELATED MATERIALS 12.3-7 (2003): 1127–1132. Print.
APA
Mavroidis, C., Harris, J., Jackman, R., Bougrioua, Z., & Moerman, I. (2003). Evidence of an impurity band at an n-GaN/sapphire interface. DIAMOND AND RELATED MATERIALS, 12(3-7), 1127–1132. Presented at the 13th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, Nitrides and Silicon Carbide (Diamond 2002).
Chicago author-date
Mavroidis, C, JJ Harris, RB Jackman, Zahia Bougrioua, and Ingrid Moerman. 2003. “Evidence of an Impurity Band at an n-GaN/sapphire Interface.” Diamond and Related Materials 12 (3-7): 1127–1132.
Chicago author-date (all authors)
Mavroidis, C, JJ Harris, RB Jackman, Zahia Bougrioua, and Ingrid Moerman. 2003. “Evidence of an Impurity Band at an n-GaN/sapphire Interface.” Diamond and Related Materials 12 (3-7): 1127–1132.
Vancouver
1.
Mavroidis C, Harris J, Jackman R, Bougrioua Z, Moerman I. Evidence of an impurity band at an n-GaN/sapphire interface. DIAMOND AND RELATED MATERIALS. 2003;12(3-7):1127–32.
IEEE
[1]
C. Mavroidis, J. Harris, R. Jackman, Z. Bougrioua, and I. Moerman, “Evidence of an impurity band at an n-GaN/sapphire interface,” DIAMOND AND RELATED MATERIALS, vol. 12, no. 3–7, pp. 1127–1132, 2003.
@article{216483,
  author       = {Mavroidis, C and Harris, JJ and Jackman, RB and Bougrioua, Zahia and Moerman, Ingrid},
  issn         = {0925-9635},
  journal      = {DIAMOND AND RELATED MATERIALS},
  keywords     = {reactive ion etching,GaN,electrical properties characterization,interface electronic properties,FIELD-EFFECT TRANSISTORS,MOLECULAR-BEAM EPITAXY,GAN FILMS,BULK GAN,MOBILITY,CONDUCTION,SAPPHIRE,LAYER},
  language     = {eng},
  location     = {Granada, Spain},
  number       = {3-7},
  pages        = {1127--1132},
  title        = {Evidence of an impurity band at an n-GaN/sapphire interface},
  url          = {http://dx.doi.org/10.1016/S0925-9635(02)00395-3},
  volume       = {12},
  year         = {2003},
}

Altmetric
View in Altmetric
Web of Science
Times cited: