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AlGaN/GaN HEMTS: material, processing, and characterization

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MLA
CALLE, F, T PALACIOS, E MONROY, et al. “AlGaN/GaN HEMTS: Material, Processing, and Characterization.” JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS 14.5-7 (2003): 271–277. Print.
APA
CALLE, F., PALACIOS, T., MONROY, E., GRAJAL, J., VERDU, M., Bougrioua, Z., & Moerman, I. (2003). AlGaN/GaN HEMTS: material, processing, and characterization. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 14(5-7), 271–277.
Chicago author-date
CALLE, F, T PALACIOS, E MONROY, J GRAJAL, M VERDU, Zahia Bougrioua, and Ingrid Moerman. 2003. “AlGaN/GaN HEMTS: Material, Processing, and Characterization.” Journal of Materials Science-materials in Electronics 14 (5-7): 271–277.
Chicago author-date (all authors)
CALLE, F, T PALACIOS, E MONROY, J GRAJAL, M VERDU, Zahia Bougrioua, and Ingrid Moerman. 2003. “AlGaN/GaN HEMTS: Material, Processing, and Characterization.” Journal of Materials Science-materials in Electronics 14 (5-7): 271–277.
Vancouver
1.
CALLE F, PALACIOS T, MONROY E, GRAJAL J, VERDU M, Bougrioua Z, et al. AlGaN/GaN HEMTS: material, processing, and characterization. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS. KLUWER ACADEMIC PUBL; 2003;14(5-7):271–7.
IEEE
[1]
F. CALLE et al., “AlGaN/GaN HEMTS: material, processing, and characterization,” JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, vol. 14, no. 5–7, pp. 271–277, 2003.
@article{216382,
  author       = {CALLE, F and PALACIOS, T and MONROY, E and GRAJAL, J and VERDU, M and Bougrioua, Zahia and Moerman, Ingrid},
  issn         = {0957-4522},
  journal      = {JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS},
  language     = {eng},
  number       = {5-7},
  pages        = {271--277},
  publisher    = {KLUWER ACADEMIC PUBL},
  title        = {AlGaN/GaN HEMTS: material, processing, and characterization},
  volume       = {14},
  year         = {2003},
}

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