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Effect of growth interrupt and growth rate on MOVPE-grown InGaN/GaN MQW structures

(2003) JOURNAL OF CRYSTAL GROWTH. 248. p.498-502
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MLA
JACOBS, K, B VAN DAELE, MR LEYS, et al. “Effect of Growth Interrupt and Growth Rate on MOVPE-grown InGaN/GaN MQW Structures.” JOURNAL OF CRYSTAL GROWTH 248 (2003): 498–502. Print.
APA
JACOBS, K., VAN DAELE, B., LEYS, M., Moerman, I., & VAN TENDELOO, G. (2003). Effect of growth interrupt and growth rate on MOVPE-grown InGaN/GaN MQW structures. JOURNAL OF CRYSTAL GROWTH, 248, 498–502.
Chicago author-date
JACOBS, K, B VAN DAELE, MR LEYS, Ingrid Moerman, and G VAN TENDELOO. 2003. “Effect of Growth Interrupt and Growth Rate on MOVPE-grown InGaN/GaN MQW Structures.” Journal of Crystal Growth 248: 498–502.
Chicago author-date (all authors)
JACOBS, K, B VAN DAELE, MR LEYS, Ingrid Moerman, and G VAN TENDELOO. 2003. “Effect of Growth Interrupt and Growth Rate on MOVPE-grown InGaN/GaN MQW Structures.” Journal of Crystal Growth 248: 498–502.
Vancouver
1.
JACOBS K, VAN DAELE B, LEYS M, Moerman I, VAN TENDELOO G. Effect of growth interrupt and growth rate on MOVPE-grown InGaN/GaN MQW structures. JOURNAL OF CRYSTAL GROWTH. Elsevier Science; 2003;248:498–502.
IEEE
[1]
K. JACOBS, B. VAN DAELE, M. LEYS, I. Moerman, and G. VAN TENDELOO, “Effect of growth interrupt and growth rate on MOVPE-grown InGaN/GaN MQW structures,” JOURNAL OF CRYSTAL GROWTH, vol. 248, pp. 498–502, 2003.
@article{216369,
  author       = {JACOBS, K and VAN DAELE, B and LEYS, MR and Moerman, Ingrid and VAN TENDELOO, G},
  issn         = {0022-0248},
  journal      = {JOURNAL OF CRYSTAL GROWTH},
  language     = {eng},
  pages        = {498--502},
  publisher    = {Elsevier Science},
  title        = {Effect of growth interrupt and growth rate on MOVPE-grown InGaN/GaN MQW structures},
  volume       = {248},
  year         = {2003},
}

Web of Science
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