Advanced search
Add to list

Zn channeled implantation in GaN: damages investigated by using high resolution XTEM and channeling RBS

Author
Organization

Citation

Please use this url to cite or link to this publication:

MLA
DING, FR, W HE, A VANTOMME, et al. “Zn Channeled Implantation in GaN: Damages Investigated by Using High Resolution XTEM and Channeling RBS.” MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 98.1 (2003): 70–73. Print.
APA
DING, F., HE, W., VANTOMME, A., ZHAO, Q., PIPELEERS, B., JACOBS, K., & Moerman, I. (2003). Zn channeled implantation in GaN: damages investigated by using high resolution XTEM and channeling RBS. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 98(1), 70–73.
Chicago author-date
DING, FR, W HE, A VANTOMME, Q ZHAO, B PIPELEERS, K JACOBS, and Ingrid Moerman. 2003. “Zn Channeled Implantation in GaN: Damages Investigated by Using High Resolution XTEM and Channeling RBS.” Materials Science and Engineering B-solid State Materials for Advanced Technology 98 (1): 70–73.
Chicago author-date (all authors)
DING, FR, W HE, A VANTOMME, Q ZHAO, B PIPELEERS, K JACOBS, and Ingrid Moerman. 2003. “Zn Channeled Implantation in GaN: Damages Investigated by Using High Resolution XTEM and Channeling RBS.” Materials Science and Engineering B-solid State Materials for Advanced Technology 98 (1): 70–73.
Vancouver
1.
DING F, HE W, VANTOMME A, ZHAO Q, PIPELEERS B, JACOBS K, et al. Zn channeled implantation in GaN: damages investigated by using high resolution XTEM and channeling RBS. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY. ELSEVIER SCIENCE SA; 2003;98(1):70–3.
IEEE
[1]
F. DING et al., “Zn channeled implantation in GaN: damages investigated by using high resolution XTEM and channeling RBS,” MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, vol. 98, no. 1, pp. 70–73, 2003.
@article{216362,
  author       = {DING, FR and HE, W and VANTOMME, A and ZHAO, Q and PIPELEERS, B and JACOBS, K and Moerman, Ingrid},
  issn         = {0921-5107},
  journal      = {MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY},
  language     = {eng},
  number       = {1},
  pages        = {70--73},
  publisher    = {ELSEVIER SCIENCE SA},
  title        = {Zn channeled implantation in GaN: damages investigated by using high resolution XTEM and channeling RBS},
  volume       = {98},
  year         = {2003},
}

Web of Science
Times cited: