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The influence of lateral carrier diffusion and surface recombination on the behavior of semiconductor optical amplifier (SOA)-based MMIs

J DE MERLIER, Geert Morthier (UGent) and Roel Baets (UGent)
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Chicago
DE MERLIER, J, Geert Morthier, and Roel Baets. 2003. “The Influence of Lateral Carrier Diffusion and Surface Recombination on the Behavior of Semiconductor Optical Amplifier (SOA)-based MMIs.” Ieee Journal of Quantum Electronics 39 (7): 880–885.
APA
DE MERLIER, J., Morthier, G., & Baets, R. (2003). The influence of lateral carrier diffusion and surface recombination on the behavior of semiconductor optical amplifier (SOA)-based MMIs. IEEE JOURNAL OF QUANTUM ELECTRONICS, 39(7), 880–885.
Vancouver
1.
DE MERLIER J, Morthier G, Baets R. The influence of lateral carrier diffusion and surface recombination on the behavior of semiconductor optical amplifier (SOA)-based MMIs. IEEE JOURNAL OF QUANTUM ELECTRONICS. IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC; 2003;39(7):880–5.
MLA
DE MERLIER, J, Geert Morthier, and Roel Baets. “The Influence of Lateral Carrier Diffusion and Surface Recombination on the Behavior of Semiconductor Optical Amplifier (SOA)-based MMIs.” IEEE JOURNAL OF QUANTUM ELECTRONICS 39.7 (2003): 880–885. Print.
@article{216295,
  author       = {DE MERLIER, J and Morthier, Geert and Baets, Roel},
  issn         = {0018-9197},
  journal      = {IEEE JOURNAL OF QUANTUM ELECTRONICS},
  language     = {eng},
  number       = {7},
  pages        = {880--885},
  publisher    = {IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC},
  title        = {The influence of lateral carrier diffusion and surface recombination on the behavior of semiconductor optical amplifier (SOA)-based MMIs},
  volume       = {39},
  year         = {2003},
}

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