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Characterisation of epitaxial CeO2 thin films

Els Bruneel (UGent) , Greet Penneman and Serge Hoste (UGent)
Author
Organization
Project
COST Materials Action 528, Chemical Solution Deposition of Thin Films
Abstract
Y1Ba2Cu3O7- superconducting thin films are desirable for the development of high temperature superconducting wires, cables, electronic devices and others. It has been shown, using vacuum techniques, that high critical currents can be reached in such thin films if they exhibit a high degree of in-plane orientation, and provided a buffer layer is used. In this work it is shown that one of the most interesting buffer layers, CeO2, can be grown as an oriented thin film using a sol-gel technique. The advantage of this sol-gel method compared to vacuum techniques is its low investment cost and possibility of incorporation in a continuous system. The phase composition, crystallographic microstructure, orientation and surface morphology of the gels and films were characterised by XRD, XPS, SEM, AFM and TGA-DTA. The orientation of the CeO2 thin film has been measured via pole figures. The results show that highly oriented CeO2 layers can be obtained by epitaxial growth on textured Ni-tapes from sol-gel precursors.
Keywords
epitaxial, thin film, CeO2, sol gel

Citation

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Chicago
Bruneel, Els, Greet Penneman, and Serge Hoste. 2003. “Characterisation of Epitaxial CeO2 Thin Films.” In COST Materials Action 528, Meeting, Presentations.
APA
Bruneel, Els, Penneman, G., & Hoste, S. (2003). Characterisation of epitaxial CeO2 thin films. COST Materials Action 528, Meeting, Presentations. Presented at the Meeting of COST Materials Action 528.
Vancouver
1.
Bruneel E, Penneman G, Hoste S. Characterisation of epitaxial CeO2 thin films. COST Materials Action 528, Meeting, Presentations. 2003.
MLA
Bruneel, Els, Greet Penneman, and Serge Hoste. “Characterisation of Epitaxial CeO2 Thin Films.” COST Materials Action 528, Meeting, Presentations. 2003. Print.
@inproceedings{2154122,
  abstract     = {Y1Ba2Cu3O7- superconducting thin films are desirable for the development of high temperature superconducting wires, cables, electronic devices and others. It has been shown, using vacuum techniques, that high critical currents can be reached in such thin films if they exhibit a high degree of in-plane orientation, and provided a buffer layer is used. In this work it is shown that one of the most interesting buffer layers, CeO2, can be grown as an oriented thin film using a sol-gel technique. The advantage of this sol-gel method compared to vacuum techniques is its low investment cost and possibility of incorporation in a continuous system.
The phase composition, crystallographic microstructure, orientation and surface morphology of the gels and films were characterised by XRD, XPS, SEM, AFM and TGA-DTA. The orientation of the CeO2 thin film has been measured via pole figures. The results show that highly oriented CeO2 layers can be obtained by epitaxial growth on textured Ni-tapes from sol-gel precursors.},
  author       = {Bruneel, Els and Penneman, Greet and Hoste, Serge},
  booktitle    = {COST Materials Action 528, Meeting, Presentations},
  keyword      = {epitaxial,thin film,CeO2,sol gel},
  language     = {eng},
  location     = {Cambridge, UK},
  title        = {Characterisation of epitaxial CeO2 thin films},
  year         = {2003},
}