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Analysis of Auger recombination characteristics in high resistivity Si and Ge

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Abstract
The characteristics of the band-to-band Auger recombination in Czochralski-grown high resistivity Si and Ge single crystals have been studied using a contactless technique to measure excess carrier decay transients based on infrared absorption by free carriers. The measurements are performed using laser light excitation with wavelengths ranging from 1.2 to 2.5 mu m to reduce inhomogeneity effects in the extraction of the Auger recombination parameters. A linear approximation of the initial excess carrier decay lifetime yields an approximate value of the Auger recombination coefficient in Ge gamma(A,Ge) congruent to 2x10(-31) cm(6)/s, which is close to that in Si. These characteristics also indicate that the difference in Auger recombination coefficients for the ehh and eeh processes is small. A more detailed fitting procedure applied simultaneously on a series of experimental transients yields a more accurate value of (8 +/- 3)x10(-31) cm(6)/s for the Auger recombination coefficient in Ge.
Keywords
Auger recombination, ABSORPTION, SILICON, silicon, carrier recombination lifetimes, germanium, SEMICONDUCTORS, CARRIER LIFETIMES, GERMANIUM

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MLA
Uleckas, A, E Gaubas, T Ceponis, et al. “Analysis of Auger Recombination Characteristics in High Resistivity Si and Ge.” Solid State Phenomena. Ed. W Jantsch & F Schaffler. Vol. 178–179. Stafa-Zürich, Switzerland: Trans Tech, 2011. 427–432. Print.
APA
Uleckas, A., Gaubas, E., Ceponis, T., Zilinskas, K., Grigonis, R., Sirutkaitis, V., & Vanhellemont, J. (2011). Analysis of Auger recombination characteristics in high resistivity Si and Ge. In W. Jantsch & F. Schaffler (Eds.), Solid State Phenomena (Vol. 178–179, pp. 427–432). Presented at the 14th International biannual meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST 2011), Stafa-Zürich, Switzerland: Trans Tech.
Chicago author-date
Uleckas, A, E Gaubas, T Ceponis, K Zilinskas, R Grigonis, V Sirutkaitis, and Jan Vanhellemont. 2011. “Analysis of Auger Recombination Characteristics in High Resistivity Si and Ge.” In Solid State Phenomena, ed. W Jantsch and F Schaffler, 178-179:427–432. Stafa-Zürich, Switzerland: Trans Tech.
Chicago author-date (all authors)
Uleckas, A, E Gaubas, T Ceponis, K Zilinskas, R Grigonis, V Sirutkaitis, and Jan Vanhellemont. 2011. “Analysis of Auger Recombination Characteristics in High Resistivity Si and Ge.” In Solid State Phenomena, ed. W Jantsch and F Schaffler, 178-179:427–432. Stafa-Zürich, Switzerland: Trans Tech.
Vancouver
1.
Uleckas A, Gaubas E, Ceponis T, Zilinskas K, Grigonis R, Sirutkaitis V, et al. Analysis of Auger recombination characteristics in high resistivity Si and Ge. In: Jantsch W, Schaffler F, editors. Solid State Phenomena. Stafa-Zürich, Switzerland: Trans Tech; 2011. p. 427–32.
IEEE
[1]
A. Uleckas et al., “Analysis of Auger recombination characteristics in high resistivity Si and Ge,” in Solid State Phenomena, Loipersdorf, Austria, 2011, vol. 178–179, pp. 427–432.
@inproceedings{2137932,
  abstract     = {The characteristics of the band-to-band Auger recombination in Czochralski-grown high resistivity Si and Ge single crystals have been studied using a contactless technique to measure excess carrier decay transients based on infrared absorption by free carriers. The measurements are performed using laser light excitation with wavelengths ranging from 1.2 to 2.5 mu m to reduce inhomogeneity effects in the extraction of the Auger recombination parameters. A linear approximation of the initial excess carrier decay lifetime yields an approximate value of the Auger recombination coefficient in Ge gamma(A,Ge) congruent to 2x10(-31) cm(6)/s, which is close to that in Si. These characteristics also indicate that the difference in Auger recombination coefficients for the ehh and eeh processes is small. A more detailed fitting procedure applied simultaneously on a series of experimental transients yields a more accurate value of (8 +/- 3)x10(-31) cm(6)/s for the Auger recombination coefficient in Ge.},
  author       = {Uleckas, A and Gaubas, E and Ceponis, T and Zilinskas, K and Grigonis, R and Sirutkaitis, V and Vanhellemont, Jan},
  booktitle    = {Solid State Phenomena},
  editor       = {Jantsch, W and Schaffler, F},
  issn         = {1012-0394},
  keywords     = {Auger recombination,ABSORPTION,SILICON,silicon,carrier recombination lifetimes,germanium,SEMICONDUCTORS,CARRIER LIFETIMES,GERMANIUM},
  language     = {eng},
  location     = {Loipersdorf, Austria},
  pages        = {427--432},
  publisher    = {Trans Tech},
  title        = {Analysis of Auger recombination characteristics in high resistivity Si and Ge},
  url          = {http://dx.doi.org/10.4028/www.scientific.net/SSP.178-179.427},
  volume       = {178-179},
  year         = {2011},
}

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