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Carrier lifetime studies in diode structures on Si substrates with and without Ge doping

A Uleckas, E Gaubas, JM Rafi, J Chen, D Yang, H Ohyama, E Simoen and Jan Vanhellemont UGent (2011) Solid State Phenomena. In Solid State Phenomena 178-179. p.347-352
abstract
Results are presented of a comparative study of diodes processed on n-type Cz grown Si substrates without and with Ge doping concentration of about 10(19) cm(-3) and 10(20) cm(-3). In order to investigate thermal donor formation, isothermal annealing at 450 degrees C for 0.5 - 5 h was carried out. As processed diodes were also irradiated with 2 MeV electrons with fluences in the range between 10(14) and 10(17) e/cm(2) to investigate the Ge doping influence on irradiation induced defect formation. Diodes after thermal and radiation treatments have been investigated by combining different techniques.
Please use this url to cite or link to this publication:
author
organization
year
type
conference (proceedingsPaper)
publication status
published
subject
keyword
Czochralski silicon, germanium doping, carrier lifetime, defects, GERMANIUM, SILICON
in
Solid State Phenomena
editor
W Jantsch and F Schaffler
series title
Solid State Phenomena
volume
178-179
issue title
Gettering and defect engineering in semiconductor technology XIV
pages
347 - 352
publisher
Trans Tech
place of publication
Stafa-Zürich, Switzerland
conference name
14th International biannual meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST 2011)
conference location
Loipersdorf, Austria
conference start
2011-09-25
conference end
2011-09-30
Web of Science type
Proceedings Paper
Web of Science id
000303356300055
ISSN
1012-0394
DOI
10.4028/www.scientific.net/SSP.178-179.347
language
English
UGent publication?
yes
classification
P1
copyright statement
I have transferred the copyright for this publication to the publisher
id
2137922
handle
http://hdl.handle.net/1854/LU-2137922
date created
2012-06-09 19:52:38
date last changed
2017-01-02 09:53:05
@inproceedings{2137922,
  abstract     = {Results are presented of a comparative study of diodes processed on n-type Cz grown Si substrates without and with Ge doping concentration of about 10(19) cm(-3) and 10(20) cm(-3). In order to investigate thermal donor formation, isothermal annealing at 450 degrees C for 0.5 - 5 h was carried out. As processed diodes were also irradiated with 2 MeV electrons with fluences in the range between 10(14) and 10(17) e/cm(2) to investigate the Ge doping influence on irradiation induced defect formation. Diodes after thermal and radiation treatments have been investigated by combining different techniques.},
  author       = {Uleckas, A and Gaubas, E and Rafi, JM and Chen, J and Yang, D and Ohyama, H and Simoen, E and Vanhellemont, Jan},
  booktitle    = {Solid State Phenomena},
  editor       = {Jantsch, W and Schaffler, F},
  issn         = {1012-0394},
  keyword      = {Czochralski silicon,germanium doping,carrier lifetime,defects,GERMANIUM,SILICON},
  language     = {eng},
  location     = {Loipersdorf, Austria},
  pages        = {347--352},
  publisher    = {Trans Tech},
  title        = {Carrier lifetime studies in diode structures on Si substrates with and without Ge doping},
  url          = {http://dx.doi.org/10.4028/www.scientific.net/SSP.178-179.347},
  volume       = {178-179},
  year         = {2011},
}

Chicago
Uleckas, A, E Gaubas, JM Rafi, J Chen, D Yang, H Ohyama, E Simoen, and Jan Vanhellemont. 2011. “Carrier Lifetime Studies in Diode Structures on Si Substrates with and Without Ge Doping.” In Solid State Phenomena, ed. W Jantsch and F Schaffler, 178-179:347–352. Stafa-Zürich, Switzerland: Trans Tech.
APA
Uleckas, A., Gaubas, E., Rafi, J., Chen, J., Yang, D., Ohyama, H., Simoen, E., et al. (2011). Carrier lifetime studies in diode structures on Si substrates with and without Ge doping. In W. Jantsch & F. Schaffler (Eds.), Solid State Phenomena (Vol. 178–179, pp. 347–352). Presented at the 14th International biannual meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST 2011), Stafa-Zürich, Switzerland: Trans Tech.
Vancouver
1.
Uleckas A, Gaubas E, Rafi J, Chen J, Yang D, Ohyama H, et al. Carrier lifetime studies in diode structures on Si substrates with and without Ge doping. In: Jantsch W, Schaffler F, editors. Solid State Phenomena. Stafa-Zürich, Switzerland: Trans Tech; 2011. p. 347–52.
MLA
Uleckas, A, E Gaubas, JM Rafi, et al. “Carrier Lifetime Studies in Diode Structures on Si Substrates with and Without Ge Doping.” Solid State Phenomena. Ed. W Jantsch & F Schaffler. Vol. 178–179. Stafa-Zürich, Switzerland: Trans Tech, 2011. 347–352. Print.