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Carrier lifetime studies in diode structures on Si substrates with and without Ge doping

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Abstract
Results are presented of a comparative study of diodes processed on n-type Cz grown Si substrates without and with Ge doping concentration of about 10(19) cm(-3) and 10(20) cm(-3). In order to investigate thermal donor formation, isothermal annealing at 450 degrees C for 0.5 - 5 h was carried out. As processed diodes were also irradiated with 2 MeV electrons with fluences in the range between 10(14) and 10(17) e/cm(2) to investigate the Ge doping influence on irradiation induced defect formation. Diodes after thermal and radiation treatments have been investigated by combining different techniques.
Keywords
Czochralski silicon, germanium doping, carrier lifetime, defects, GERMANIUM, SILICON

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Citation

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Chicago
Uleckas, A, E Gaubas, JM Rafi, J Chen, D Yang, H Ohyama, E Simoen, and Jan Vanhellemont. 2011. “Carrier Lifetime Studies in Diode Structures on Si Substrates with and Without Ge Doping.” In Solid State Phenomena, ed. W Jantsch and F Schaffler, 178-179:347–352. Stafa-Zürich, Switzerland: Trans Tech.
APA
Uleckas, A., Gaubas, E., Rafi, J., Chen, J., Yang, D., Ohyama, H., Simoen, E., et al. (2011). Carrier lifetime studies in diode structures on Si substrates with and without Ge doping. In W. Jantsch & F. Schaffler (Eds.), Solid State Phenomena (Vol. 178–179, pp. 347–352). Presented at the 14th International biannual meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST 2011), Stafa-Zürich, Switzerland: Trans Tech.
Vancouver
1.
Uleckas A, Gaubas E, Rafi J, Chen J, Yang D, Ohyama H, et al. Carrier lifetime studies in diode structures on Si substrates with and without Ge doping. In: Jantsch W, Schaffler F, editors. Solid State Phenomena. Stafa-Zürich, Switzerland: Trans Tech; 2011. p. 347–52.
MLA
Uleckas, A, E Gaubas, JM Rafi, et al. “Carrier Lifetime Studies in Diode Structures on Si Substrates with and Without Ge Doping.” Solid State Phenomena. Ed. W Jantsch & F Schaffler. Vol. 178–179. Stafa-Zürich, Switzerland: Trans Tech, 2011. 347–352. Print.
@inproceedings{2137922,
  abstract     = {Results are presented of a comparative study of diodes processed on n-type Cz grown Si substrates without and with Ge doping concentration of about 10(19) cm(-3) and 10(20) cm(-3). In order to investigate thermal donor formation, isothermal annealing at 450 degrees C for 0.5 - 5 h was carried out. As processed diodes were also irradiated with 2 MeV electrons with fluences in the range between 10(14) and 10(17) e/cm(2) to investigate the Ge doping influence on irradiation induced defect formation. Diodes after thermal and radiation treatments have been investigated by combining different techniques.},
  author       = {Uleckas, A and Gaubas, E and Rafi, JM and Chen, J and Yang, D and Ohyama, H and Simoen, E and Vanhellemont, Jan},
  booktitle    = {Solid State Phenomena},
  editor       = {Jantsch, W and Schaffler, F},
  issn         = {1012-0394},
  keyword      = {Czochralski silicon,germanium doping,carrier lifetime,defects,GERMANIUM,SILICON},
  language     = {eng},
  location     = {Loipersdorf, Austria},
  pages        = {347--352},
  publisher    = {Trans Tech},
  title        = {Carrier lifetime studies in diode structures on Si substrates with and without Ge doping},
  url          = {http://dx.doi.org/10.4028/www.scientific.net/SSP.178-179.347},
  volume       = {178-179},
  year         = {2011},
}

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