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Ab initio study of vacancy and self-interstitial properties near single crystal silicon surfaces

Eiji Kamiyama, Koji Sueoka and Jan Vanhellemont UGent (2012) JOURNAL OF APPLIED PHYSICS. 111(8).
Please use this url to cite or link to this publication:
author
organization
year
type
journalArticle (original)
publication status
published
subject
keyword
GROWN-IN DEFECTS, SCANNING-TUNNELING-MICROSCOPY, CZOCHRALSKI SILICON, SI(001)
journal title
JOURNAL OF APPLIED PHYSICS
J. Appl. Phys.
volume
111
issue
8
article_number
083507
pages
9 pages
Web of Science type
Article
Web of Science id
000303598800022
JCR category
PHYSICS, APPLIED
JCR impact factor
2.21 (2012)
JCR rank
31/127 (2012)
JCR quartile
1 (2012)
ISSN
0021-8979
DOI
10.1063/1.4703911
language
English
UGent publication?
yes
classification
A1
copyright statement
I have transferred the copyright for this publication to the publisher
id
2137914
handle
http://hdl.handle.net/1854/LU-2137914
date created
2012-06-09 19:52:38
date last changed
2012-06-11 10:56:33
@article{2137914,
  articleno    = {083507},
  author       = {Kamiyama, Eiji and Sueoka, Koji and Vanhellemont, Jan},
  issn         = {0021-8979},
  journal      = {JOURNAL OF APPLIED PHYSICS},
  keyword      = {GROWN-IN DEFECTS,SCANNING-TUNNELING-MICROSCOPY,CZOCHRALSKI SILICON,SI(001)},
  language     = {eng},
  number       = {8},
  pages        = {9},
  title        = {Ab initio study of vacancy and self-interstitial properties near single crystal silicon surfaces},
  url          = {http://dx.doi.org/10.1063/1.4703911},
  volume       = {111},
  year         = {2012},
}

Chicago
Kamiyama, Eiji, Koji Sueoka, and Jan Vanhellemont. 2012. “Ab Initio Study of Vacancy and Self-interstitial Properties Near Single Crystal Silicon Surfaces.” Journal of Applied Physics 111 (8).
APA
Kamiyama, E., Sueoka, K., & Vanhellemont, J. (2012). Ab initio study of vacancy and self-interstitial properties near single crystal silicon surfaces. JOURNAL OF APPLIED PHYSICS, 111(8).
Vancouver
1.
Kamiyama E, Sueoka K, Vanhellemont J. Ab initio study of vacancy and self-interstitial properties near single crystal silicon surfaces. JOURNAL OF APPLIED PHYSICS. 2012;111(8).
MLA
Kamiyama, Eiji, Koji Sueoka, and Jan Vanhellemont. “Ab Initio Study of Vacancy and Self-interstitial Properties Near Single Crystal Silicon Surfaces.” JOURNAL OF APPLIED PHYSICS 111.8 (2012): n. pag. Print.