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Ab initio study of vacancy and self-interstitial properties near single crystal silicon surfaces

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Keywords
GROWN-IN DEFECTS, SCANNING-TUNNELING-MICROSCOPY, CZOCHRALSKI SILICON, SI(001)

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Citation

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Chicago
Kamiyama, Eiji, Koji Sueoka, and Jan Vanhellemont. 2012. “Ab Initio Study of Vacancy and Self-interstitial Properties Near Single Crystal Silicon Surfaces.” Journal of Applied Physics 111 (8).
APA
Kamiyama, Eiji, Sueoka, K., & Vanhellemont, J. (2012). Ab initio study of vacancy and self-interstitial properties near single crystal silicon surfaces. JOURNAL OF APPLIED PHYSICS, 111(8).
Vancouver
1.
Kamiyama E, Sueoka K, Vanhellemont J. Ab initio study of vacancy and self-interstitial properties near single crystal silicon surfaces. JOURNAL OF APPLIED PHYSICS. 2012;111(8).
MLA
Kamiyama, Eiji, Koji Sueoka, and Jan Vanhellemont. “Ab Initio Study of Vacancy and Self-interstitial Properties Near Single Crystal Silicon Surfaces.” JOURNAL OF APPLIED PHYSICS 111.8 (2012): n. pag. Print.
@article{2137914,
  articleno    = {083507},
  author       = {Kamiyama, Eiji and Sueoka, Koji and Vanhellemont, Jan},
  issn         = {0021-8979},
  journal      = {JOURNAL OF APPLIED PHYSICS},
  keyword      = {GROWN-IN DEFECTS,SCANNING-TUNNELING-MICROSCOPY,CZOCHRALSKI SILICON,SI(001)},
  language     = {eng},
  number       = {8},
  pages        = {9},
  title        = {Ab initio study of vacancy and self-interstitial properties near single crystal silicon surfaces},
  url          = {http://dx.doi.org/10.1063/1.4703911},
  volume       = {111},
  year         = {2012},
}

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