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Modeling and in situ characterization of the conformality of atomic layer deposition in high aspect ratio structures and nanoporous materials

(2012)
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Abstract
Atomic layer deposition (ALD) is a thin-film growth method that is characterized by alternating exposure of the growing film to chemical precursors. During these exposures, the gas phase precursor molecules react with the surface in a self-terminating manner enabling the deposition of ultrathin coatings in a layer-by-layer fashion and thickness control at the atomic-level. An important advantage of ALD, and also the topic of this thesis, is the excellent conformality, i.e. the ability to deposit uniformly on complex 3D substrates. At present, ALD is mainly used in the microelectronics industry (for growing gate oxides) but its unique advantages also render it a promising candidate for coating nanoporous structures, e.g. for functionalization of large surface area substrates for catalysis, sensors, fuel cells, batteries, filtration devices, membranes, photonics, etc. In the first part of this PhD thesis, models for ALD in high aspect ratio structures were developed and compared to experimental data. Furthermore, the effect of different deposition parameters on the conformality of plasma-enhanced ALD was investigated. The primary goal of the second part was to explore the limits of the conformality of ALD by deposition into nanoporous materials. To this end, novel characterization techniques were developed for in situ monitoring ALD in different types of nanoporous thin films.
Keywords
nanoporous materials, grazing incidence small angle x-ray scattering, atomic layer deposition, x-ray fluorescence, ellipsometric porosimetry

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Chicago
Dendooven, Jolien. 2012. “Modeling and in Situ Characterization of the Conformality of Atomic Layer Deposition in High Aspect Ratio Structures and Nanoporous Materials”. Ghent, Belgium: Ghent University. Faculty of Sciences.
APA
Dendooven, J. (2012). Modeling and in situ characterization of the conformality of atomic layer deposition in high aspect ratio structures and nanoporous materials. Ghent University. Faculty of Sciences, Ghent, Belgium.
Vancouver
1.
Dendooven J. Modeling and in situ characterization of the conformality of atomic layer deposition in high aspect ratio structures and nanoporous materials. [Ghent, Belgium]: Ghent University. Faculty of Sciences; 2012.
MLA
Dendooven, Jolien. “Modeling and in Situ Characterization of the Conformality of Atomic Layer Deposition in High Aspect Ratio Structures and Nanoporous Materials.” 2012 : n. pag. Print.
@phdthesis{2132019,
  abstract     = {Atomic layer deposition (ALD) is a thin-film growth method that is characterized by alternating exposure of the growing film to chemical precursors. During these exposures, the gas phase precursor molecules react with the surface in a self-terminating manner enabling the deposition of ultrathin coatings in a layer-by-layer fashion and thickness control at the atomic-level. An important advantage of ALD, and also the topic of this thesis, is the excellent conformality, i.e. the ability to deposit uniformly on complex 3D substrates. At present, ALD is mainly used in the microelectronics industry (for growing gate oxides) but its unique advantages also render it a promising candidate for coating nanoporous structures, e.g. for functionalization of large surface area substrates for catalysis, sensors, fuel cells, batteries, filtration devices, membranes, photonics, etc.
In the first part of this PhD thesis, models for ALD in high aspect ratio structures were developed and compared to experimental data. Furthermore, the effect of different deposition parameters on the conformality of plasma-enhanced ALD was investigated. The primary goal of the second part was to explore the limits of the conformality of ALD by deposition into nanoporous materials. To this end, novel characterization techniques were developed for in situ monitoring ALD in different types of nanoporous thin films.},
  author       = {Dendooven, Jolien},
  keywords     = {nanoporous materials,grazing incidence small angle x-ray scattering,atomic layer deposition,x-ray fluorescence,ellipsometric porosimetry},
  language     = {eng},
  pages        = {XIV, 224},
  publisher    = {Ghent University. Faculty of Sciences},
  school       = {Ghent University},
  title        = {Modeling and in situ characterization of the conformality of atomic layer deposition in high aspect ratio structures and nanoporous materials},
  year         = {2012},
}