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A temperature independent emission component in the capacitance transients of deep-level defects in germanium

Siegfried Segers UGent, Johan Lauwaert UGent, Paul Clauws UGent, Eddy Simoen, Freddy Callens UGent, Jan Vanhellemont UGent and Henk Vrielinck UGent (2012) E-MRS Spring meeting, Abstracts.
abstract
The last decades germanium is regaining importance as active layer in semiconductor technology because of the high (drift) mobility of carriers. Most of the interesting properties of this material stem from impurities and point defects. Some of these impurities (f.e. transition metals) give rise to deep levels in the band gap, which can reduce the carrier lifetime and therefor need to be studied. Due to its high sensitivity, deep level transient spectroscopy (DLTS) is an excellent technique to detect and identify these impurities and defects. In this work, p-type germanium wafers have been quenched or intentionally contaminated with transition metals and studied by DLTS. At low temperatures, a quasi-constant emission component has been observed at high time windows (oder of seconds). This component can be associated with a tunneling emission of holes from a defect state towards the valence band. By considering a single quantum well and using the model proposed by Letartre et al. [1], experimental evidence of this tunneling effect in germanium will be given and the electrical properties of these defects will be examined. [1] X. Letartre, D. Stiévenard, M. Lannoo and E. Barbier, J. Appl. Phys. 69, 7336 (1991)
Please use this url to cite or link to this publication:
author
organization
year
type
conference
publication status
published
subject
in
E-MRS Spring meeting, Abstracts
conference name
E-MRS Spring meeting 2012
conference location
Strasbourg, France
conference start
2012-05-15
conference end
2012-05-17
language
English
UGent publication?
yes
classification
C3
additional info
uploaded document is poster version
copyright statement
I have retained and own the full copyright for this publication
id
2120899
handle
http://hdl.handle.net/1854/LU-2120899
date created
2012-05-30 10:39:20
date last changed
2012-07-13 15:40:09
@inproceedings{2120899,
  abstract     = {The last decades germanium is regaining importance as active layer in semiconductor technology because of the high (drift) mobility of carriers. Most of the interesting properties of this material stem from impurities and point defects. 
Some of these impurities (f.e. transition metals) give rise to deep levels in the band gap, which can reduce the carrier lifetime and therefor need to be studied. Due to its high sensitivity, deep level transient spectroscopy (DLTS) is an excellent technique to detect and identify these impurities and defects.
In this work, p-type germanium wafers have been quenched or intentionally contaminated with transition metals and studied by DLTS.  At low temperatures, a quasi-constant emission component has been observed at high time windows (oder of seconds). This component can be associated with a tunneling emission of holes from a defect state towards the valence band. By considering a single quantum well and using the model proposed by Letartre et al. [1], experimental evidence of this tunneling effect in germanium will be given and the electrical properties of these defects will be examined.
[1] X. Letartre, D. Sti{\'e}venard, M. Lannoo and E. Barbier, J. Appl. Phys. 69, 7336 (1991)},
  author       = {Segers, Siegfried and Lauwaert, Johan and Clauws, Paul and Simoen, Eddy and Callens, Freddy and Vanhellemont, Jan and Vrielinck, Henk},
  booktitle    = {E-MRS Spring meeting, Abstracts},
  language     = {eng},
  location     = {Strasbourg, France},
  title        = {A temperature independent emission component in the capacitance transients of deep-level defects in germanium},
  year         = {2012},
}

Chicago
Segers, Siegfried, Johan Lauwaert, Paul Clauws, Eddy Simoen, Freddy Callens, Jan Vanhellemont, and Henk Vrielinck. 2012. “A Temperature Independent Emission Component in the Capacitance Transients of Deep-level Defects in Germanium.” In E-MRS Spring Meeting, Abstracts.
APA
Segers, S., Lauwaert, J., Clauws, P., Simoen, E., Callens, F., Vanhellemont, J., & Vrielinck, H. (2012). A temperature independent emission component in the capacitance transients of deep-level defects in germanium. E-MRS Spring meeting, Abstracts. Presented at the E-MRS Spring meeting 2012.
Vancouver
1.
Segers S, Lauwaert J, Clauws P, Simoen E, Callens F, Vanhellemont J, et al. A temperature independent emission component in the capacitance transients of deep-level defects in germanium. E-MRS Spring meeting, Abstracts. 2012.
MLA
Segers, Siegfried, Johan Lauwaert, Paul Clauws, et al. “A Temperature Independent Emission Component in the Capacitance Transients of Deep-level Defects in Germanium.” E-MRS Spring Meeting, Abstracts. 2012. Print.