Advanced search
1 file | 10.42 MB

Sputter deposition of MgO thin films: the effect of cation substitution

(2012)
Author
Promoter
(UGent)
Organization
Abstract
The importance of thin films relies on their ability to modify in an easy and, in most cases, cost efficient way the surface properties of bulk materials and thus, their functionality. Thin films have been deposited already for a long time. Sputter deposition is a widely used technique since it combines versatility, control over the composition and microstructure, relatively high deposition rates and conceptual simplicity. Most of the new technologically interesting materials have complex chemistry and crystalline structure. An example of the increased complexity is the ternary metal oxides of the group Mg-M-O, where M represents a metal other than Mg. This class of materials has gained considerable research attention the last years and Mg-M-O films find application in catalysis and surface protection, as well as in high-k dielectrics, ionic conductors, high Tc superconductors, and thin film batteries. The goal of the present thesis is to contribute towards understanding the fundamental growth mechanisms of sputter deposited ternary oxide films with the general formula Mg-M-O (where M is a metal different than Mg). The key objectives of the study are: (i) To establish the relation between the deposition conditions and the chemical composition in the Mg-M-O films and through this, achieve an efficient and accurate control over the film stoichiometry. (ii) To understand the effect of the deposition conditions and the chemical composition on the structure formation and crystallographic properties of Mg-M-O films. (ii) To elucidate the effect of chemistry and microstructure on a number of functional properties of the Mg-M-O films. Films are deposited employing reactive magnetron sputtering (in an Ar-O2 atmosphere) from two (Mg and M) confocally arranged magnetron sources. This multisource approach facilitates a large flexibility with respect to the chemical compositions that can be accessed. In addition, the confocal arrangement of the sources leads to an off-normal deposition flux providing a tool to control and tune the crystallographic properties of the films. The metals (M) Al, Cr, Ti, Y and Zr are chosen to systematically vary key physical parameters of the substituting element in the metal sublattice of the Mg-M-O films, i.e. the valence electron number and the atomic size, and to study their largely unexplored effect on the film microstructure and crystallographic properties.

Downloads

  • Saraiva.pdf
    • full text
    • |
    • open access
    • |
    • PDF
    • |
    • 10.42 MB

Citation

Please use this url to cite or link to this publication:

Chicago
Martins Saraiva, Marta. 2012. “Sputter Deposition of MgO Thin Films: The Effect of Cation Substitution”. Ghent, Belgium: Ghent University. Faculty of Sciences.
APA
Martins Saraiva, M. (2012). Sputter deposition of MgO thin films: the effect of cation substitution. Ghent University. Faculty of Sciences, Ghent, Belgium.
Vancouver
1.
Martins Saraiva M. Sputter deposition of MgO thin films: the effect of cation substitution. [Ghent, Belgium]: Ghent University. Faculty of Sciences; 2012.
MLA
Martins Saraiva, Marta. “Sputter Deposition of MgO Thin Films: The Effect of Cation Substitution.” 2012 : n. pag. Print.
@phdthesis{2100270,
  abstract     = {The importance of thin films relies on their ability to modify in an easy and, in most cases, cost efficient way the surface properties of bulk materials and thus, their functionality. Thin films have been deposited already for a long time. Sputter deposition is a widely used technique since it combines versatility, control over the composition and microstructure, relatively high deposition rates and conceptual simplicity.
Most of the new technologically interesting materials have complex chemistry and crystalline structure. An example of the increased complexity is the ternary metal oxides of the group Mg-M-O, where M represents a metal other than Mg. This class of materials has gained considerable research attention the last years and Mg-M-O films find application in catalysis and surface protection, as well as in high-k dielectrics, ionic conductors, high Tc superconductors, and thin film batteries.
The goal of the present thesis is to contribute towards understanding the fundamental growth mechanisms of sputter deposited ternary oxide films with the general formula Mg-M-O (where M is a metal different than Mg). The key objectives of the study are:
(i) To establish the relation between the deposition conditions and the chemical composition in the Mg-M-O films and through this, achieve an efficient and accurate control over the film stoichiometry.
(ii) To understand the effect of the deposition conditions and the chemical composition on the structure formation and crystallographic properties of Mg-M-O films.
(ii) To elucidate the effect of chemistry and microstructure on a number of functional properties of the Mg-M-O films.
Films are deposited employing reactive magnetron sputtering (in an Ar-O2 atmosphere) from two (Mg and M) confocally arranged magnetron sources. This multisource approach facilitates a large flexibility with respect to the chemical compositions that can be accessed. In addition, the confocal arrangement of the sources leads to an off-normal deposition flux providing a tool to control and tune the crystallographic properties of the films. The metals (M) Al, Cr, Ti, Y and Zr are chosen to systematically vary key physical parameters of the substituting element in the metal sublattice of the Mg-M-O films, i.e. the valence electron number and the atomic size, and to study their largely unexplored effect on the film microstructure and crystallographic properties.},
  author       = {Martins Saraiva, Marta},
  isbn         = {9789461970381},
  language     = {eng},
  pages        = {III, 144},
  publisher    = {Ghent University. Faculty of Sciences},
  school       = {Ghent University},
  title        = {Sputter deposition of MgO thin films: the effect of cation substitution},
  year         = {2012},
}