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Accuracy of defect distributions measured by bias dependent admittance spectroscopy on thin film solar cells

Koen Decock UGent, Samira Khelifi UGent and Marc Burgelman UGent (2011) Conference record of the IEEE Photovoltaic Specialists Conference. p.1691-1694
abstract
Thin film solar cells have achieved efficiencies up to 20%. Despite these excellent results, the understanding of the underlying mechanisms and the influence of defects on their performance is still incomplete. In thin film solar cells often defect level distributions are present rather than discrete defects. These distributions can be calculated from admittance measurements, however several assumptions are needed which hinder an exact defect density determination. By performing the measurements under different bias voltage conditions the accuracy of the method can be improved and assessed. This is illustrated with measurements on a flexible thin film Cu(In,Ga)Se2- based (CIGS) solar cell.
Please use this url to cite or link to this publication:
author
organization
year
type
conference
publication status
published
subject
in
Conference record of the IEEE Photovoltaic Specialists Conference
Conf. rec. IEEE Photovolt. Spec. Conf.
pages
1691 - 1694
publisher
IEEE
place of publication
New York, NY, USA
conference name
37th IEEE Photovoltaic Specialists Conference (PVSC - 2011)
conference location
Seattle, WA, USA
conference start
2011-06-19
conference end
2011-06-24
ISSN
0160-8371
DOI
10.1109/pvsc.2011.6186280
language
English
UGent publication?
yes
classification
C1
copyright statement
I have transferred the copyright for this publication to the publisher
id
2099810
handle
http://hdl.handle.net/1854/LU-2099810
alternative location
http://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=6186280&contentType=Conference+Publications&searchWithin%3Dp_Authors%3A.QT.Decock%2C+K..QT.%26searchField%3DSearch_All
date created
2012-05-07 12:08:10
date last changed
2012-05-08 11:42:31
@inproceedings{2099810,
  abstract     = {Thin film solar cells have achieved efficiencies up to 20\%. Despite these excellent results, the understanding of the underlying mechanisms and the influence of defects on their performance is still incomplete. In thin film solar cells often defect level distributions are present rather than discrete defects. These distributions can be calculated from admittance measurements, however several assumptions are needed which hinder an exact defect density determination. By performing the measurements under different bias voltage conditions the accuracy of the method can be improved and assessed. This is illustrated with measurements on a flexible thin film Cu(In,Ga)Se2- based (CIGS) solar cell.},
  author       = {Decock, Koen and Khelifi, Samira and Burgelman, Marc},
  booktitle    = {Conference record of the IEEE Photovoltaic Specialists Conference},
  issn         = {0160-8371},
  language     = {eng},
  location     = {Seattle, WA, USA},
  pages        = {1691--1694},
  publisher    = {IEEE},
  title        = {Accuracy of defect distributions measured by bias dependent admittance spectroscopy on thin film solar cells},
  url          = {http://dx.doi.org/10.1109/pvsc.2011.6186280},
  year         = {2011},
}

Chicago
Decock, Koen, Samira Khelifi, and Marc Burgelman. 2011. “Accuracy of Defect Distributions Measured by Bias Dependent Admittance Spectroscopy on Thin Film Solar Cells.” In Conference Record of the IEEE Photovoltaic Specialists Conference, 1691–1694. New York, NY, USA: IEEE.
APA
Decock, K., Khelifi, S., & Burgelman, M. (2011). Accuracy of defect distributions measured by bias dependent admittance spectroscopy on thin film solar cells. Conference record of the IEEE Photovoltaic Specialists Conference (pp. 1691–1694). Presented at the 37th IEEE Photovoltaic Specialists Conference (PVSC - 2011), New York, NY, USA: IEEE.
Vancouver
1.
Decock K, Khelifi S, Burgelman M. Accuracy of defect distributions measured by bias dependent admittance spectroscopy on thin film solar cells. Conference record of the IEEE Photovoltaic Specialists Conference. New York, NY, USA: IEEE; 2011. p. 1691–4.
MLA
Decock, Koen, Samira Khelifi, and Marc Burgelman. “Accuracy of Defect Distributions Measured by Bias Dependent Admittance Spectroscopy on Thin Film Solar Cells.” Conference Record of the IEEE Photovoltaic Specialists Conference. New York, NY, USA: IEEE, 2011. 1691–1694. Print.