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Current-voltage characteristic of Ti-pSi metal-oxide-semiconductor diodes

(1984) JOURNAL OF APPLIED PHYSICS. 56(8). p.2309-2314
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Chicago
Hanselaer, PL, Willy Laflere, Roland Vanmeirhaeghe, and Felix Cardon. 1984. “Current-voltage Characteristic of Ti-pSi Metal-oxide-semiconductor Diodes.” Journal of Applied Physics 56 (8): 2309–2314.
APA
Hanselaer, PL, Laflere, W., Vanmeirhaeghe, R., & Cardon, F. (1984). Current-voltage characteristic of Ti-pSi metal-oxide-semiconductor diodes. JOURNAL OF APPLIED PHYSICS, 56(8), 2309–2314.
Vancouver
1.
Hanselaer P, Laflere W, Vanmeirhaeghe R, Cardon F. Current-voltage characteristic of Ti-pSi metal-oxide-semiconductor diodes. JOURNAL OF APPLIED PHYSICS. 1984;56(8):2309–14.
MLA
Hanselaer, PL, Willy Laflere, Roland Vanmeirhaeghe, et al. “Current-voltage Characteristic of Ti-pSi Metal-oxide-semiconductor Diodes.” JOURNAL OF APPLIED PHYSICS 56.8 (1984): 2309–2314. Print.
@article{2085777,
  author       = {Hanselaer, PL and Laflere, Willy and Vanmeirhaeghe, Roland and Cardon, Felix},
  issn         = {0021-8979},
  journal      = {JOURNAL OF APPLIED PHYSICS},
  language     = {eng},
  number       = {8},
  pages        = {2309--2314},
  title        = {Current-voltage characteristic of Ti-pSi metal-oxide-semiconductor diodes},
  url          = {http://dx.doi.org/10.1063/1.334265},
  volume       = {56},
  year         = {1984},
}

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