Ghent University Academic Bibliography

Advanced

Current-voltage characteristic of Ti-pSi metal-oxide-semiconductor diodes

PL Hanselaer, Willy Laflere, Roland Vanmeirhaeghe and Felix Cardon (1984) JOURNAL OF APPLIED PHYSICS. 56(8). p.2309-2314
Please use this url to cite or link to this publication:
author
organization
year
type
journalArticle (original)
publication status
published
subject
journal title
JOURNAL OF APPLIED PHYSICS
J. Appl. Phys.
volume
56
issue
8
pages
2309 - 2314
Web of Science type
Article
ISSN
0021-8979
DOI
10.1063/1.334265
language
English
UGent publication?
yes
classification
A1
id
2085777
handle
http://hdl.handle.net/1854/LU-2085777
date created
2012-04-12 21:54:12
date last changed
2016-12-19 15:42:24
@article{2085777,
  author       = {Hanselaer, PL and Laflere, Willy and Vanmeirhaeghe, Roland and Cardon, Felix},
  issn         = {0021-8979},
  journal      = {JOURNAL OF APPLIED PHYSICS},
  language     = {eng},
  number       = {8},
  pages        = {2309--2314},
  title        = {Current-voltage characteristic of Ti-pSi metal-oxide-semiconductor diodes},
  url          = {http://dx.doi.org/10.1063/1.334265},
  volume       = {56},
  year         = {1984},
}

Chicago
Hanselaer, PL, Willy Laflère, Roland Vanmeirhaeghe, and Felix Cardon. 1984. “Current-voltage Characteristic of Ti-pSi Metal-oxide-semiconductor Diodes.” Journal of Applied Physics 56 (8): 2309–2314.
APA
Hanselaer, P., Laflère, W., Vanmeirhaeghe, R., & Cardon, F. (1984). Current-voltage characteristic of Ti-pSi metal-oxide-semiconductor diodes. JOURNAL OF APPLIED PHYSICS, 56(8), 2309–2314.
Vancouver
1.
Hanselaer P, Laflère W, Vanmeirhaeghe R, Cardon F. Current-voltage characteristic of Ti-pSi metal-oxide-semiconductor diodes. JOURNAL OF APPLIED PHYSICS. 1984;56(8):2309–14.
MLA
Hanselaer, PL, Willy Laflère, Roland Vanmeirhaeghe, et al. “Current-voltage Characteristic of Ti-pSi Metal-oxide-semiconductor Diodes.” JOURNAL OF APPLIED PHYSICS 56.8 (1984): 2309–2314. Print.