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A quantitative expression for partial Fermi level pinning at semiconductor/redox electrolyte interfaces

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Chicago
Vanmeirhaeghe, Roland, Felix Cardon, and Walter Gomes. 1985. “A Quantitative Expression for Partial Fermi Level Pinning at Semiconductor/redox Electrolyte Interfaces.” Journal of Electroanalytical Chemistry 188 (1-2): 287–291.
APA
Vanmeirhaeghe, R., Cardon, F., & Gomes, W. (1985). A quantitative expression for partial Fermi level pinning at semiconductor/redox electrolyte interfaces. JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 188(1-2), 287–291.
Vancouver
1.
Vanmeirhaeghe R, Cardon F, Gomes W. A quantitative expression for partial Fermi level pinning at semiconductor/redox electrolyte interfaces. JOURNAL OF ELECTROANALYTICAL CHEMISTRY. 1985;188(1-2):287–91.
MLA
Vanmeirhaeghe, Roland, Felix Cardon, and Walter Gomes. “A Quantitative Expression for Partial Fermi Level Pinning at Semiconductor/redox Electrolyte Interfaces.” JOURNAL OF ELECTROANALYTICAL CHEMISTRY 188.1-2 (1985): 287–291. Print.
@article{2085728,
  author       = {Vanmeirhaeghe, Roland and Cardon, Felix and Gomes, Walter},
  issn         = {0022-0728},
  journal      = {JOURNAL OF ELECTROANALYTICAL CHEMISTRY},
  language     = {eng},
  number       = {1-2},
  pages        = {287--291},
  title        = {A quantitative expression for partial Fermi level pinning at semiconductor/redox electrolyte interfaces},
  url          = {http://dx.doi.org/10.1016/S0022-0728(85)80070-X},
  volume       = {188},
  year         = {1985},
}

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