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The quantum diode

Alexis De Vos UGent (1991) SEMICONDUCTOR SCIENCE AND TECHNOLOGY. 6(5). p.370-377
abstract
The lower limit of the saturation current of a p-n junction diode is determined from first principles. It turns out to be about 15 orders of magnitude smaller than the saturation current of commercially available diodes. An inevitable series resistance is also determined.
Please use this url to cite or link to this publication:
author
organization
year
type
journalArticle (original)
publication status
published
subject
journal title
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Semicond. Sci. Technol.
volume
6
issue
5
pages
370 - 377
Web of Science type
Article
ISSN
0268-1242
language
English
UGent publication?
yes
classification
A1
id
208071
handle
http://hdl.handle.net/1854/LU-208071
date created
2004-01-26 14:34:00
date last changed
2018-01-26 12:59:47
@article{208071,
  abstract     = {The lower limit of the saturation current of a p-n junction diode is determined from first principles. It turns out to be about 15 orders of magnitude smaller than the saturation current of commercially available diodes. An inevitable series resistance is also determined.},
  author       = {De Vos, Alexis},
  issn         = {0268-1242},
  journal      = {SEMICONDUCTOR SCIENCE AND TECHNOLOGY},
  language     = {eng},
  number       = {5},
  pages        = {370--377},
  title        = {The quantum diode},
  volume       = {6},
  year         = {1991},
}

Chicago
De Vos, Alexis. 1991. “The Quantum Diode.” Semiconductor Science and Technology 6 (5): 370–377.
APA
De Vos, Alexis. (1991). The quantum diode. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 6(5), 370–377.
Vancouver
1.
De Vos A. The quantum diode. SEMICONDUCTOR SCIENCE AND TECHNOLOGY. 1991;6(5):370–7.
MLA
De Vos, Alexis. “The Quantum Diode.” SEMICONDUCTOR SCIENCE AND TECHNOLOGY 6.5 (1991): 370–377. Print.