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The influence of low copper-doping concentrations on the recrystallisation process in and the electrical-properties of germanium in Ge-Cu thin-film transistors

(1990) THIN SOLID FILMS. 189(2). p.235-245
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Chicago
Doutreloigne, Jan, Johan De Baets, Igor De Rycke, Herbert De Smet, André Van Calster, and Jan Vanfleteren. 1990. “The Influence of Low Copper-doping Concentrations on the Recrystallisation Process in and the Electrical-properties of Germanium in Ge-Cu Thin-film Transistors.” Thin Solid Films 189 (2): 235–245.
APA
Doutreloigne, J., De Baets, J., De Rycke, I., De Smet, H., Van Calster, A., & Vanfleteren, J. (1990). The influence of low copper-doping concentrations on the recrystallisation process in and the electrical-properties of germanium in Ge-Cu thin-film transistors. THIN SOLID FILMS, 189(2), 235–245.
Vancouver
1.
Doutreloigne J, De Baets J, De Rycke I, De Smet H, Van Calster A, Vanfleteren J. The influence of low copper-doping concentrations on the recrystallisation process in and the electrical-properties of germanium in Ge-Cu thin-film transistors. THIN SOLID FILMS. 1990;189(2):235–45.
MLA
Doutreloigne, Jan, Johan De Baets, Igor De Rycke, et al. “The Influence of Low Copper-doping Concentrations on the Recrystallisation Process in and the Electrical-properties of Germanium in Ge-Cu Thin-film Transistors.” THIN SOLID FILMS 189.2 (1990): 235–245. Print.
@article{208064,
  author       = {Doutreloigne, Jan and De Baets, Johan and De Rycke, Igor and De Smet, Herbert and Van Calster, Andr{\'e} and Vanfleteren, Jan},
  issn         = {0040-6090},
  journal      = {THIN SOLID FILMS},
  language     = {eng},
  number       = {2},
  pages        = {235--245},
  title        = {The influence of low copper-doping concentrations on the recrystallisation process in and the electrical-properties of germanium in Ge-Cu thin-film transistors},
  url          = {http://dx.doi.org/10.1016/0040-6090(90)90452-J},
  volume       = {189},
  year         = {1990},
}

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