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The electrical performance of a complementary CdSe:In/Ge:Cu thin film transistor technology for flat panel displays

Jan Doutreloigne UGent, Johan De Baets UGent, Igor De Rycke, Herbert De Smet UGent, André Van Calster UGent and Jan Vanfleteren UGent (1990) SOLID-STATE ELECTRONICS. 34(2). p.143-147
abstract
A new photolithographic complementary CdSe:In/Ge:Cu thin film transistor technology, applicable for the integration of driver circuits on the substrate of flat panel displays, will be presented. The static as well as the dynamic aspects of the electrical behaviour of the components are discussed. Evidence was found that these devices exhibit all the advantages, typical for a CMOS-technology: increased speed compared to n-type logic, high noise immunity and low power consumption. Consequently, this technology will enable us to construct very reliable driver circuits for large area flat panel displays.
Please use this url to cite or link to this publication:
author
organization
year
type
journalArticle (original)
publication status
published
subject
journal title
SOLID-STATE ELECTRONICS
Solid-State Electron.
volume
34
issue
2
pages
143-147 pages
Web of Science type
Article
ISSN
0038-1101
language
English
UGent publication?
yes
classification
A1
id
208052
handle
http://hdl.handle.net/1854/LU-208052
date created
2004-01-26 14:34:00
date last changed
2016-12-19 15:39:15
@article{208052,
  abstract     = {A new photolithographic complementary CdSe:In/Ge:Cu thin film transistor technology, applicable for the integration of driver circuits on the substrate of flat panel displays, will be presented. The static as well as the dynamic aspects of the electrical behaviour of the components are discussed. Evidence was found that these devices exhibit all the advantages, typical for a CMOS-technology: increased speed compared to n-type logic, high noise immunity and low power consumption. Consequently, this technology will enable us to construct very reliable driver circuits for large area flat panel displays.},
  author       = {Doutreloigne, Jan and De Baets, Johan and De Rycke, Igor and De Smet, Herbert and Van Calster, Andr{\'e} and Vanfleteren, Jan},
  issn         = {0038-1101},
  journal      = {SOLID-STATE ELECTRONICS},
  language     = {eng},
  number       = {2},
  pages        = {143--147},
  title        = {The electrical performance of a complementary CdSe:In/Ge:Cu thin film transistor technology for flat panel displays},
  volume       = {34},
  year         = {1990},
}

Chicago
Doutreloigne, Jan, Johan De Baets, Igor De Rycke, Herbert De Smet, André Van Calster, and Jan Vanfleteren. 1990. “The Electrical Performance of a Complementary CdSe:In/Ge:Cu Thin Film Transistor Technology for Flat Panel Displays.” Solid-state Electronics 34 (2): 143–147.
APA
Doutreloigne, J., De Baets, J., De Rycke, I., De Smet, H., Van Calster, A., & Vanfleteren, J. (1990). The electrical performance of a complementary CdSe:In/Ge:Cu thin film transistor technology for flat panel displays. SOLID-STATE ELECTRONICS, 34(2), 143–147.
Vancouver
1.
Doutreloigne J, De Baets J, De Rycke I, De Smet H, Van Calster A, Vanfleteren J. The electrical performance of a complementary CdSe:In/Ge:Cu thin film transistor technology for flat panel displays. SOLID-STATE ELECTRONICS. 1990;34(2):143–7.
MLA
Doutreloigne, Jan, Johan De Baets, Igor De Rycke, et al. “The Electrical Performance of a Complementary CdSe:In/Ge:Cu Thin Film Transistor Technology for Flat Panel Displays.” SOLID-STATE ELECTRONICS 34.2 (1990): 143–147. Print.