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A comparison between silicon-nitride films made by PCVD of N2-SiH4/Ar and N2-SiH4/He

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Chicago
Allaert, Koenraad, André Van Calster, H Loos, and A Lequesne. 1985. “A Comparison Between Silicon-nitride Films Made by PCVD of N2-SiH4/Ar and N2-SiH4/He.” Journal of the Electrochemical Society 132 (7): 1763–1766.
APA
Allaert, K., Van Calster, A., Loos, H., & Lequesne, A. (1985). A comparison between silicon-nitride films made by PCVD of N2-SiH4/Ar and N2-SiH4/He. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 132(7), 1763–1766.
Vancouver
1.
Allaert K, Van Calster A, Loos H, Lequesne A. A comparison between silicon-nitride films made by PCVD of N2-SiH4/Ar and N2-SiH4/He. JOURNAL OF THE ELECTROCHEMICAL SOCIETY. 1985;132(7):1763–6.
MLA
Allaert, Koenraad, André Van Calster, H Loos, et al. “A Comparison Between Silicon-nitride Films Made by PCVD of N2-SiH4/Ar and N2-SiH4/He.” JOURNAL OF THE ELECTROCHEMICAL SOCIETY 132.7 (1985): 1763–1766. Print.
@article{207888,
  author       = {Allaert, Koenraad and Van Calster, Andr{\'e} and Loos, H and Lequesne, A},
  issn         = {0013-4651},
  journal      = {JOURNAL OF THE ELECTROCHEMICAL SOCIETY},
  language     = {eng},
  number       = {7},
  pages        = {1763--1766},
  title        = {A comparison between silicon-nitride films made by PCVD of N2-SiH4/Ar and N2-SiH4/He},
  url          = {http://dx.doi.org/10.1149/1.2114207},
  volume       = {132},
  year         = {1985},
}

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