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Modeling of MOS-transistors with nonrectangular gate geometries: comment

Gilbert De Mey UGent (1983) IEEE TRANSACTIONS ON ELECTRON DEVICES. 30(7). p.862-863
Please use this url to cite or link to this publication:
author
organization
year
type
journalArticle (letterNote)
publication status
published
subject
journal title
IEEE TRANSACTIONS ON ELECTRON DEVICES
IEEE Trans. Electron Devices
volume
30
issue
7
pages
862 - 863
Web of Science type
Note
ISSN
0018-9383
DOI
10.1109/T-ED.1983.21224
language
English
UGent publication?
yes
classification
A1
id
207872
handle
http://hdl.handle.net/1854/LU-207872
date created
2004-01-26 14:34:00
date last changed
2016-12-19 15:38:03
@article{207872,
  author       = {De Mey, Gilbert},
  issn         = {0018-9383},
  journal      = {IEEE TRANSACTIONS ON ELECTRON DEVICES},
  language     = {eng},
  number       = {7},
  pages        = {862--863},
  title        = {Modeling of MOS-transistors with nonrectangular gate geometries: comment},
  url          = {http://dx.doi.org/10.1109/T-ED.1983.21224},
  volume       = {30},
  year         = {1983},
}

Chicago
De Mey, Gilbert. 1983. “Modeling of MOS-transistors with Nonrectangular Gate Geometries: Comment.” Ieee Transactions on Electron Devices 30 (7): 862–863.
APA
De Mey, G. (1983). Modeling of MOS-transistors with nonrectangular gate geometries: comment. IEEE TRANSACTIONS ON ELECTRON DEVICES, 30(7), 862–863.
Vancouver
1.
De Mey G. Modeling of MOS-transistors with nonrectangular gate geometries: comment. IEEE TRANSACTIONS ON ELECTRON DEVICES. 1983;30(7):862–3.
MLA
De Mey, Gilbert. “Modeling of MOS-transistors with Nonrectangular Gate Geometries: Comment.” IEEE TRANSACTIONS ON ELECTRON DEVICES 30.7 (1983): 862–863. Print.