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Modeling of MOS-transistors with nonrectangular gate geometries: comment

Gilbert De Mey (UGent)
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Please use this url to cite or link to this publication:

Chicago
De Mey, Gilbert. 1983. “Modeling of MOS-transistors with Nonrectangular Gate Geometries: Comment.” Ieee Transactions on Electron Devices 30 (7): 862–863.
APA
De Mey, G. (1983). Modeling of MOS-transistors with nonrectangular gate geometries: comment. IEEE TRANSACTIONS ON ELECTRON DEVICES, 30(7), 862–863.
Vancouver
1.
De Mey G. Modeling of MOS-transistors with nonrectangular gate geometries: comment. IEEE TRANSACTIONS ON ELECTRON DEVICES. 1983;30(7):862–3.
MLA
De Mey, Gilbert. “Modeling of MOS-transistors with Nonrectangular Gate Geometries: Comment.” IEEE TRANSACTIONS ON ELECTRON DEVICES 30.7 (1983): 862–863. Print.
@article{207872,
  author       = {De Mey, Gilbert},
  issn         = {0018-9383},
  journal      = {IEEE TRANSACTIONS ON ELECTRON DEVICES},
  language     = {eng},
  number       = {7},
  pages        = {862--863},
  title        = {Modeling of MOS-transistors with nonrectangular gate geometries: comment},
  url          = {http://dx.doi.org/10.1109/T-ED.1983.21224},
  volume       = {30},
  year         = {1983},
}

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