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Ultra-low copper baths for sub-35 nm copper interconnects

Tanya Atanasova UGent, Katrien Strubbe UGent, Laureen Carbonell, Rudy Caluwaerts, Zsolt Tokei and Philippe M Vereecken (2012) ECS Transactions. 41(35). p.83-97
abstract
The copper interconnect technology is constrained by the significant current distribution due to the terminal effect for resistive thin seeds. As a result, the current in the wafer center can become insufficient for cathodic protection of thin copper seeds leading to center seed corrosion. To improve the current distribution, the exchange current density can be lowered e.g. by lowering the copper concentration. Our approach is to investigate and develop acid ultra-low copper baths with feature fill capability. For this goal, the optimum additives concentrations were sought and fill studies in 30 nm trenches were performed. In addition, proposing a high acid chemistry that is also compatible with direct plating, would enable the in-situ copper seed formation and filling in one and the same process step for direct plating on non-copper seed.
Please use this url to cite or link to this publication:
author
organization
year
type
conference
publication status
published
subject
in
ECS Transactions
ECS Trans.
editor
PM Vereecken, G Oskam, I Shao and J Fransaer
volume
41
issue
35
issue title
Semiconductors, metal oxides, and composites : metallization and electrodeposition of thin films and nanostructures 2
pages
83 - 97
publisher
Electrochemical Society (ECS)
place of publication
Pennington, NJ, USA
conference name
220th ECS Meeting
conference location
Boston, MA, USA
conference start
2011-10-10
conference end
2011-10-14
Web of Science type
Proceedings Paper
Web of Science id
000325352300011
ISSN
1938-5862
ISBN
9781607683346
DOI
10.1149/1.3699383
language
English
UGent publication?
yes
classification
P1
copyright statement
I have transferred the copyright for this publication to the publisher
id
2078569
handle
http://hdl.handle.net/1854/LU-2078569
date created
2012-03-30 16:58:32
date last changed
2016-10-11 13:31:56
@inproceedings{2078569,
  abstract     = {The copper interconnect technology is constrained by the significant current distribution due to the terminal effect for resistive thin seeds. As a result, the current in the wafer center can become insufficient for cathodic protection of thin copper seeds leading to center seed corrosion. To improve the current distribution, the exchange current density can be lowered e.g. by lowering the copper concentration. Our approach is to investigate and develop acid ultra-low copper baths with feature fill capability. For this goal, the optimum additives concentrations were sought and fill studies in 30 nm trenches were performed. In addition, proposing a high acid chemistry that is also compatible with direct plating, would enable the in-situ copper seed formation and filling in one and the same process step for direct plating on non-copper seed.},
  author       = {Atanasova, Tanya and Strubbe, Katrien and Carbonell, Laureen and Caluwaerts, Rudy and Tokei, Zsolt and Vereecken, Philippe M},
  booktitle    = {ECS Transactions},
  editor       = {Vereecken, PM and Oskam, G and Shao, I and Fransaer, J},
  isbn         = {9781607683346},
  issn         = {1938-5862},
  language     = {eng},
  location     = {Boston, MA, USA},
  number       = {35},
  pages        = {83--97},
  publisher    = {Electrochemical Society (ECS)},
  title        = {Ultra-low copper baths for sub-35 nm copper interconnects},
  url          = {http://dx.doi.org/10.1149/1.3699383},
  volume       = {41},
  year         = {2012},
}

Chicago
Atanasova, Tanya, Katrien Strubbe, Laureen Carbonell, Rudy Caluwaerts, Zsolt Tokei, and Philippe M Vereecken. 2012. “Ultra-low Copper Baths for Sub-35 Nm Copper Interconnects.” In ECS Transactions, ed. PM Vereecken, G Oskam, I Shao, and J Fransaer, 41:83–97. Pennington, NJ, USA: Electrochemical Society (ECS).
APA
Atanasova, T., Strubbe, K., Carbonell, L., Caluwaerts, R., Tokei, Z., & Vereecken, P. M. (2012). Ultra-low copper baths for sub-35 nm copper interconnects. In PM Vereecken, G. Oskam, I. Shao, & J. Fransaer (Eds.), ECS Transactions (Vol. 41, pp. 83–97). Presented at the 220th ECS Meeting, Pennington, NJ, USA: Electrochemical Society (ECS).
Vancouver
1.
Atanasova T, Strubbe K, Carbonell L, Caluwaerts R, Tokei Z, Vereecken PM. Ultra-low copper baths for sub-35 nm copper interconnects. In: Vereecken P, Oskam G, Shao I, Fransaer J, editors. ECS Transactions. Pennington, NJ, USA: Electrochemical Society (ECS); 2012. p. 83–97.
MLA
Atanasova, Tanya, Katrien Strubbe, Laureen Carbonell, et al. “Ultra-low Copper Baths for Sub-35 Nm Copper Interconnects.” ECS Transactions. Ed. PM Vereecken et al. Vol. 41. Pennington, NJ, USA: Electrochemical Society (ECS), 2012. 83–97. Print.